Recrystallization kinetics pattern in III-V implanted semiconductors

C. Licoppe; Y. I. Nissim; C. Meriadec; P. Hénoc

doi:10.1063/1.97756

Recrystallization kinetics pattern in III-V implanted semiconductors

C. Licoppe, Y. I. Nissim, C. Meriadec, P. Hénoc

Orange Labs

Research output: Contribution to journal › Article › peer-review

Abstract

Solid phase epitaxial regrowth has been studied for a variety of ion-implanted compound semiconductors. The time-resolved reflectivity technique is used to determine growth kinetics. It is shown that the growth rate follows a thermal activation law whose activation energy and pre-exponential factor are measured. In all III-V compounds and alloys, a common regrowth kinetics behavior is found, with the activation energy proportional to a characteristic vibrational relaxation energy which also intervenes in the description of point defect migration. Differences with the case of column IV semiconductors are discussed.

Original language	English
Pages (from-to)	1648-1650
Number of pages	3
Journal	Applied Physics Letters
Volume	50
Issue number	23
DOIs	https://doi.org/10.1063/1.97756
Publication status	Published - 1 Dec 1987
Externally published	Yes

Access to Document

10.1063/1.97756

Cite this

@article{d8cafce7e74f466db219b74d99ed3c1c,

title = "Recrystallization kinetics pattern in III-V implanted semiconductors",

abstract = "Solid phase epitaxial regrowth has been studied for a variety of ion-implanted compound semiconductors. The time-resolved reflectivity technique is used to determine growth kinetics. It is shown that the growth rate follows a thermal activation law whose activation energy and pre-exponential factor are measured. In all III-V compounds and alloys, a common regrowth kinetics behavior is found, with the activation energy proportional to a characteristic vibrational relaxation energy which also intervenes in the description of point defect migration. Differences with the case of column IV semiconductors are discussed.",

author = "C. Licoppe and Nissim, \{Y. I.\} and C. Meriadec and P. H{\'e}noc",

year = "1987",

month = dec,

day = "1",

doi = "10.1063/1.97756",

language = "English",

volume = "50",

pages = "1648--1650",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "23",

}

TY - JOUR

T1 - Recrystallization kinetics pattern in III-V implanted semiconductors

AU - Licoppe, C.

AU - Nissim, Y. I.

AU - Meriadec, C.

AU - Hénoc, P.

PY - 1987/12/1

Y1 - 1987/12/1

N2 - Solid phase epitaxial regrowth has been studied for a variety of ion-implanted compound semiconductors. The time-resolved reflectivity technique is used to determine growth kinetics. It is shown that the growth rate follows a thermal activation law whose activation energy and pre-exponential factor are measured. In all III-V compounds and alloys, a common regrowth kinetics behavior is found, with the activation energy proportional to a characteristic vibrational relaxation energy which also intervenes in the description of point defect migration. Differences with the case of column IV semiconductors are discussed.

AB - Solid phase epitaxial regrowth has been studied for a variety of ion-implanted compound semiconductors. The time-resolved reflectivity technique is used to determine growth kinetics. It is shown that the growth rate follows a thermal activation law whose activation energy and pre-exponential factor are measured. In all III-V compounds and alloys, a common regrowth kinetics behavior is found, with the activation energy proportional to a characteristic vibrational relaxation energy which also intervenes in the description of point defect migration. Differences with the case of column IV semiconductors are discussed.

U2 - 10.1063/1.97756

DO - 10.1063/1.97756

M3 - Article

AN - SCOPUS:0346609101

SN - 0003-6951

VL - 50

SP - 1648

EP - 1650

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Recrystallization kinetics pattern in III-V implanted semiconductors

Abstract

Access to Document

Fingerprint

Cite this