Abstract
An experimental study on how to reduce the content of singly ionized zinc vacancy (V−Zn) in ZnGeP2 crystals to improve their optical quality is presented. Their electron paramagnetic resonance signal has been studied in samples treated in different ways. The data provide a scheme of the reductions that can be obtained by the different methods or by their combinations. The adding of Sn during the synthesis phase helps the production of large-size single crystals and the reduction of the V−Zn content. Thermal treatment and electron irradiation are then needed for further reduction. At the fluence of 2 × 1017 e cm−2, the V−Zn decrease does not reach a minimum value, so with higher fluences, additional reduction of V−Zn content is expected.
| Original language | English |
|---|---|
| Article number | 2300818 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 221 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1 Jun 2024 |
Keywords
- ZnGeP
- irradiation effects
- point defects