Reflection sensitivity of InAs/GaAs epitaxial quantum dot lasers under direct modulation

Shihao Ding; Bozhang Dong; Heming Huang; John E. Bowers; Frédéric Grillot

doi:10.1049/ell2.12440

Reflection sensitivity of InAs/GaAs epitaxial quantum dot lasers under direct modulation

Shihao Ding
, Bozhang Dong
, Heming Huang
, John E. Bowers
, Frédéric Grillot

Institut Polytechnique de Paris
University of California, Santa Barbara
University of New Mexico

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports on the reflection sensitivity under direct modulation operation of a 1.3 μm InAs/GaAs quantum dot laser that is epitaxially grown on silicon. The quantum dot laser exhibits a high tolerance to back reflections with low error transmission at 6 Gbps. This study paves the way for developing directly modulated isolator-free photonic integrated circuits based on quantum dot lasers.

Original language	English
Pages (from-to)	363-365
Number of pages	3
Journal	Electronics Letters
Volume	58
Issue number	9
DOIs	https://doi.org/10.1049/ell2.12440
Publication status	Published - 1 Apr 2022

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10.1049/ell2.12440

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title = "Reflection sensitivity of InAs/GaAs epitaxial quantum dot lasers under direct modulation",

abstract = "This paper reports on the reflection sensitivity under direct modulation operation of a 1.3 μm InAs/GaAs quantum dot laser that is epitaxially grown on silicon. The quantum dot laser exhibits a high tolerance to back reflections with low error transmission at 6 Gbps. This study paves the way for developing directly modulated isolator-free photonic integrated circuits based on quantum dot lasers.",

author = "Shihao Ding and Bozhang Dong and Heming Huang and Bowers, \{John E.\} and Fr{\'e}d{\'e}ric Grillot",

note = "Publisher Copyright: {\textcopyright} 2022 The Authors. Electronics Letters published by John Wiley \& Sons Ltd on behalf of The Institution of Engineering and Technology.",

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T1 - Reflection sensitivity of InAs/GaAs epitaxial quantum dot lasers under direct modulation

AU - Ding, Shihao

AU - Dong, Bozhang

AU - Huang, Heming

AU - Bowers, John E.

AU - Grillot, Frédéric

PY - 2022/4/1

Y1 - 2022/4/1

N2 - This paper reports on the reflection sensitivity under direct modulation operation of a 1.3 μm InAs/GaAs quantum dot laser that is epitaxially grown on silicon. The quantum dot laser exhibits a high tolerance to back reflections with low error transmission at 6 Gbps. This study paves the way for developing directly modulated isolator-free photonic integrated circuits based on quantum dot lasers.

AB - This paper reports on the reflection sensitivity under direct modulation operation of a 1.3 μm InAs/GaAs quantum dot laser that is epitaxially grown on silicon. The quantum dot laser exhibits a high tolerance to back reflections with low error transmission at 6 Gbps. This study paves the way for developing directly modulated isolator-free photonic integrated circuits based on quantum dot lasers.

U2 - 10.1049/ell2.12440

DO - 10.1049/ell2.12440

M3 - Article

AN - SCOPUS:85126019451

SN - 0013-5194

VL - 58

SP - 363

EP - 365

JO - Electronics Letters

JF - Electronics Letters

IS - 9

ER -

Reflection sensitivity of InAs/GaAs epitaxial quantum dot lasers under direct modulation

Abstract

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