Relative intensity noise of injection-locked epitaxial quantum dot laser on silicon

  • Qi Chu
  • , Shiyuan Zhao
  • , Frederic Grillot
  • , Jiawei Wang
  • , Feng He
  • , Mingyu Zhang
  • , Xiaochuan Xu
  • , Yong Yao
  • , Jianan Duan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work investigates the relative intensity noise (RIN) characteristics of quantum dot (QD) lasers epitaxially grown on silicon subject to the optical injection. The effect of threading dislocation (TD), which acts as nonradiative recombination centers in the Shockley-Read-Hall (SRH) process, is considered in the rate equation model. The results reveal that the RIN is enhanced by decreasing the nonradiative recombination lifetime. It is shown that this high RIN characteristics is suppressed by the optical injection. In the stable injection-locked area, the RIN is reduced down to - 168 dB/Hz by adjusting the injection ratio and frequency detuning. This work provides an effective method for designing low RIN lasers for photonics integrated circuits (PICs) on silicon.

Original languageEnglish
Title of host publication2022 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2022
PublisherIEEE Computer Society
Pages59-60
Number of pages2
ISBN (Electronic)9781665478991
DOIs
Publication statusPublished - 1 Jan 2022
Event2022 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2022 - Turin, Italy
Duration: 12 Sept 202216 Sept 2022

Publication series

NameProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Volume2022-September
ISSN (Print)2158-3234

Conference

Conference2022 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2022
Country/TerritoryItaly
CityTurin
Period12/09/2216/09/22

Keywords

  • Optical injection
  • Quantum dot laser
  • Relative intensity noise

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