Reliable majority voter based on spin transfer torque magnetic tunnel junction device

P. F. Butzen; M. Slimani; Y. Wang; H. Cai; L. A.B. Naviner

doi:10.1049/el.2015.2738

Reliable majority voter based on spin transfer torque magnetic tunnel junction device

P. F. Butzen
, M. Slimani
, Y. Wang
, H. Cai
, L. A.B. Naviner

Research output: Contribution to journal › Article › peer-review

Abstract

A reliable majority voter circuit using a nanometre spin transfer torque magnetic tunnel junction (STT-MTJ) is presented. The circuit tolerates single transient faults and manages process variations due to technology downscaling. The use of this magnetic device brings non-volatility memory to logic circuits and promises to overcome the rising standby power issue. By using the STMicroelectronics fully depleted silicon on insulator 28 nm design kit and a precise STT-MTJ compact model, electrical simulations have been carried out to show its low-power and high reliability performances.

Original language	English
Pages (from-to)	47-49
Number of pages	3
Journal	Electronics Letters
Volume	52
Issue number	1
DOIs	https://doi.org/10.1049/el.2015.2738
Publication status	Published - 8 Jan 2016

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10.1049/el.2015.2738

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abstract = "A reliable majority voter circuit using a nanometre spin transfer torque magnetic tunnel junction (STT-MTJ) is presented. The circuit tolerates single transient faults and manages process variations due to technology downscaling. The use of this magnetic device brings non-volatility memory to logic circuits and promises to overcome the rising standby power issue. By using the STMicroelectronics fully depleted silicon on insulator 28 nm design kit and a precise STT-MTJ compact model, electrical simulations have been carried out to show its low-power and high reliability performances.",

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AU - Butzen, P. F.

AU - Slimani, M.

AU - Wang, Y.

AU - Cai, H.

AU - Naviner, L. A.B.

PY - 2016/1/8

Y1 - 2016/1/8

N2 - A reliable majority voter circuit using a nanometre spin transfer torque magnetic tunnel junction (STT-MTJ) is presented. The circuit tolerates single transient faults and manages process variations due to technology downscaling. The use of this magnetic device brings non-volatility memory to logic circuits and promises to overcome the rising standby power issue. By using the STMicroelectronics fully depleted silicon on insulator 28 nm design kit and a precise STT-MTJ compact model, electrical simulations have been carried out to show its low-power and high reliability performances.

AB - A reliable majority voter circuit using a nanometre spin transfer torque magnetic tunnel junction (STT-MTJ) is presented. The circuit tolerates single transient faults and manages process variations due to technology downscaling. The use of this magnetic device brings non-volatility memory to logic circuits and promises to overcome the rising standby power issue. By using the STMicroelectronics fully depleted silicon on insulator 28 nm design kit and a precise STT-MTJ compact model, electrical simulations have been carried out to show its low-power and high reliability performances.

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DO - 10.1049/el.2015.2738

M3 - Article

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Reliable majority voter based on spin transfer torque magnetic tunnel junction device

Abstract

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