Resonant tunneling magnetoresistance in MnAs III-V MnAs junctions

V. Garcia; H. Jaffrès; M. Eddrief; M. Marangolo; V. H. Etgens; J. M. George

doi:10.1103/PhysRevB.72.081303

Resonant tunneling magnetoresistance in MnAs III-V MnAs junctions

V. Garcia
, H. Jaffrès
, M. Eddrief
, M. Marangolo
, V. H. Etgens
, J. M. George

École Polytechnique

CNRS, UMR 7588, INSP
Centre national de la recherche scientifique

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

This paper investigates the magnetoresistance of micron-sized MnAs GaAs (AlAs) MnAs magnetic tunnel junctions. We measure an asymmetric bias dependence of the magnetoresistance in which the negative contribution is attributed to resonant tunneling through a midgap defect band. Within this model we find a spin polarization of 60% for MnAs at the interface with GaAs. Moreover, we show that spin-dependent tunneling is a powerful technique for spectroscopic measurements of defects in a very thin layer.

Original language	English
Article number	081303
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	72
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.72.081303
Publication status	Published - 15 Aug 2005

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10.1103/PhysRevB.72.081303

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title = "Resonant tunneling magnetoresistance in MnAs III-V MnAs junctions",

abstract = "This paper investigates the magnetoresistance of micron-sized MnAs GaAs (AlAs) MnAs magnetic tunnel junctions. We measure an asymmetric bias dependence of the magnetoresistance in which the negative contribution is attributed to resonant tunneling through a midgap defect band. Within this model we find a spin polarization of 60\% for MnAs at the interface with GaAs. Moreover, we show that spin-dependent tunneling is a powerful technique for spectroscopic measurements of defects in a very thin layer.",

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AU - Garcia, V.

AU - Jaffrès, H.

AU - Eddrief, M.

AU - Marangolo, M.

AU - Etgens, V. H.

AU - George, J. M.

PY - 2005/8/15

Y1 - 2005/8/15

N2 - This paper investigates the magnetoresistance of micron-sized MnAs GaAs (AlAs) MnAs magnetic tunnel junctions. We measure an asymmetric bias dependence of the magnetoresistance in which the negative contribution is attributed to resonant tunneling through a midgap defect band. Within this model we find a spin polarization of 60% for MnAs at the interface with GaAs. Moreover, we show that spin-dependent tunneling is a powerful technique for spectroscopic measurements of defects in a very thin layer.

AB - This paper investigates the magnetoresistance of micron-sized MnAs GaAs (AlAs) MnAs magnetic tunnel junctions. We measure an asymmetric bias dependence of the magnetoresistance in which the negative contribution is attributed to resonant tunneling through a midgap defect band. Within this model we find a spin polarization of 60% for MnAs at the interface with GaAs. Moreover, we show that spin-dependent tunneling is a powerful technique for spectroscopic measurements of defects in a very thin layer.

U2 - 10.1103/PhysRevB.72.081303

DO - 10.1103/PhysRevB.72.081303

M3 - Article

AN - SCOPUS:33644961451

SN - 1098-0121

VL - 72

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 8

M1 - 081303

ER -

Resonant tunneling magnetoresistance in MnAs III-V MnAs junctions

Abstract

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