Rf discharge dissociative mode in NF3 and SiH4

  • V. Lisovskiy
  • , J. P. Booth
  • , K. Landry
  • , D. Douai
  • , V. Cassagne
  • , V. Yegorenkov

Research output: Contribution to journalArticlepeer-review

Abstract

This paper shows that the rf capacitive discharge in NF3 and SiH4 can burn in three possible modes: weak-current α-mode, strong-current γ-mode and dissociative δ-mode. This new dissociative δ-mode is characterized by a high dissociation degree of gas molecules (actually up to 100% in NF3 and up to 70% in SiH4), higher resistivity and a large discharge current. On increasing rf voltage first we may observe a weak-current α-mode (at low NF3 pressure the α-mode is absent). At rather high rf voltage when a sufficiently large number of high energy electrons appear in the discharge, an intense dissociation of gas molecules via electron impact begins, and the discharge experiences a transition to the dissociative δ-mode. The dissociation products of NF3 and SiH4 molecules possess lower ionization potentials, and they form an easily ionized admixture to the main gas. At higher rf voltages when near-electrode sheaths are broken down, the discharge experiences a transition to the strong-current γ-mode.

Original languageEnglish
Pages (from-to)6631-6640
Number of pages10
JournalJournal of Physics D: Applied Physics
Volume40
Issue number21
DOIs
Publication statusPublished - 7 Nov 2007

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