RF power detector using a silicon MOSFET

Mohamed Ratni; Bernard Huyart; Eric Bergeault; Louis Jallet

RF power detector using a silicon MOSFET

Mohamed Ratni
, Bernard Huyart
, Eric Bergeault
, Louis Jallet

Telecom Paris

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper presents a novel approach for RF power measurements using a silicon MOSFET. It describes linear and nonlinear models of the RF MOSFET for results prediction. It shows a thorough comparison between predicted and measured results. The detector demonstrates a better sensitivity than biased Schottky diode detectors that we have measured.

Original language	English
Pages (from-to)	1139-1142
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
Publication status	Published - 1 Jan 1998
Event	Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA Duration: 7 Jun 1998 → 12 Jun 1998

Cite this

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title = "RF power detector using a silicon MOSFET",

abstract = "This paper presents a novel approach for RF power measurements using a silicon MOSFET. It describes linear and nonlinear models of the RF MOSFET for results prediction. It shows a thorough comparison between predicted and measured results. The detector demonstrates a better sensitivity than biased Schottky diode detectors that we have measured.",

author = "Mohamed Ratni and Bernard Huyart and Eric Bergeault and Louis Jallet",

year = "1998",

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journal = "IEEE MTT-S International Microwave Symposium Digest",

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T1 - RF power detector using a silicon MOSFET

AU - Ratni, Mohamed

AU - Huyart, Bernard

AU - Bergeault, Eric

AU - Jallet, Louis

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Y1 - 1998/1/1

N2 - This paper presents a novel approach for RF power measurements using a silicon MOSFET. It describes linear and nonlinear models of the RF MOSFET for results prediction. It shows a thorough comparison between predicted and measured results. The detector demonstrates a better sensitivity than biased Schottky diode detectors that we have measured.

AB - This paper presents a novel approach for RF power measurements using a silicon MOSFET. It describes linear and nonlinear models of the RF MOSFET for results prediction. It shows a thorough comparison between predicted and measured results. The detector demonstrates a better sensitivity than biased Schottky diode detectors that we have measured.

UR - https://www.scopus.com/pages/publications/0031624851

M3 - Conference article

AN - SCOPUS:0031624851

SN - 0149-645X

VL - 2

SP - 1139

EP - 1142

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)

Y2 - 7 June 1998 through 12 June 1998

ER -

RF power detector using a silicon MOSFET

Abstract

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