Role of the surface roughness in laser induced crystallization of nanostructured silicon films

A. Hadjadj; L. Boufendi; S. Huet; S. Schelz; P. Roca I Cabarrocas; H. Estrade-Szwarckopf; B. Rousseau

doi:10.1116/1.582252

Role of the surface roughness in laser induced crystallization of nanostructured silicon films

A. Hadjadj
, L. Boufendi
, S. Huet
, S. Schelz
, P. Roca I Cabarrocas
, H. Estrade-Szwarckopf
, B. Rousseau

Dynamique Transferts aux Interfaces
conventionnée avec l'Université d'Orléans
Centre national de la recherche scientifique

Research output: Contribution to journal › Article › peer-review

Abstract

The bulk and surface effects on the amorphous-to-crystalline transition in ns-Si:H films deposited in a pulsed rf glow discharge were studied in relation to the plasma duration used for the deposition. The role of lattice expansion in lowering the crystallization threshold was confirmed. Nonetheless, the contribution of the surface roughness in lowering E_cryst was also emphasized.

Original language	English
Pages (from-to)	529-535
Number of pages	7
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	2
DOIs	https://doi.org/10.1116/1.582252
Publication status	Published - 1 Mar 2000

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title = "Role of the surface roughness in laser induced crystallization of nanostructured silicon films",

abstract = "The bulk and surface effects on the amorphous-to-crystalline transition in ns-Si:H films deposited in a pulsed rf glow discharge were studied in relation to the plasma duration used for the deposition. The role of lattice expansion in lowering the crystallization threshold was confirmed. Nonetheless, the contribution of the surface roughness in lowering Ecryst was also emphasized.",

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AU - Hadjadj, A.

AU - Boufendi, L.

AU - Huet, S.

AU - Schelz, S.

AU - Roca I Cabarrocas, P.

AU - Estrade-Szwarckopf, H.

AU - Rousseau, B.

PY - 2000/3/1

Y1 - 2000/3/1

N2 - The bulk and surface effects on the amorphous-to-crystalline transition in ns-Si:H films deposited in a pulsed rf glow discharge were studied in relation to the plasma duration used for the deposition. The role of lattice expansion in lowering the crystallization threshold was confirmed. Nonetheless, the contribution of the surface roughness in lowering Ecryst was also emphasized.

AB - The bulk and surface effects on the amorphous-to-crystalline transition in ns-Si:H films deposited in a pulsed rf glow discharge were studied in relation to the plasma duration used for the deposition. The role of lattice expansion in lowering the crystallization threshold was confirmed. Nonetheless, the contribution of the surface roughness in lowering Ecryst was also emphasized.

U2 - 10.1116/1.582252

DO - 10.1116/1.582252

M3 - Article

AN - SCOPUS:0034156308

SN - 0734-2101

VL - 18

SP - 529

EP - 535

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 2

ER -

Role of the surface roughness in laser induced crystallization of nanostructured silicon films

Abstract

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