Abstract
Electroluminescence associated with impact excitation or ionization of deep Cr2+ impurity centers in bulk ZnSe is reported. A broad signal of mid-infrared luminescence between 2 and 3 μm is observed once the biased bulk ZnSe device runs into a nonlinear conduction regime. Optical powers in the nanowatt range have been measured at room temperature. The different mechanisms involved in this intracenter infrared light emission are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 3501-3503 |
| Number of pages | 3 |
| Journal | Optics Letters |
| Volume | 31 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 1 Dec 2006 |
| Externally published | Yes |