SC and SI techniques performances faced with technological advances

Patricia Desgreys; Antoine Tauvel; Patrick Loumeau

doi:10.1109/ICECS.2002.1045331

SC and SI techniques performances faced with technological advances

Patricia Desgreys
, Antoine Tauvel
, Patrick Loumeau

Telecom Paris

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper proposes to compare switched-capacitors (SC) and switched-currents (SI) technique performances faced with technological advances. Three cells of identical low complexity are analysed and the following performance factors are theoretically evaluated: minimal supply voltage, signal input range, static accuracy, maximal sampling rate, signal to noise ratio and power dissipation. Then, a Figure-Of-Merit is formed and its evolution is reported in function of time. It shows that SI circuits are less sensitive to the supply voltage scaling than SC circuits as long as transistors operate in the strong inversion region. But, as gate-source overdrive is finally reduced with supply voltage, SNR_SI decreases down to a limit calculated in weak inversion mode.

Original language	English
Title of host publication	ICECS 2002 - 9th IEEE International Conference on Electronics, Circuits and Systems
Pages	53-56
Number of pages	4
DOIs	https://doi.org/10.1109/ICECS.2002.1045331
Publication status	Published - 1 Dec 2002
Event	9th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2002 - Dubrovnik, Croatia Duration: 15 Sept 2002 → 18 Sept 2002

Publication series

Name	Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Volume	1

Conference

Conference	9th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2002
Country/Territory	Croatia
City	Dubrovnik
Period	15/09/02 → 18/09/02

Access to Document

10.1109/ICECS.2002.1045331

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Desgreys, P., Tauvel, A., & Loumeau, P. (2002). SC and SI techniques performances faced with technological advances. In ICECS 2002 - 9th IEEE International Conference on Electronics, Circuits and Systems (pp. 53-56). Article 1045331 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 1). https://doi.org/10.1109/ICECS.2002.1045331

@inproceedings{8118fec3852b465a8e980811677f672a,

title = "SC and SI techniques performances faced with technological advances",

abstract = "This paper proposes to compare switched-capacitors (SC) and switched-currents (SI) technique performances faced with technological advances. Three cells of identical low complexity are analysed and the following performance factors are theoretically evaluated: minimal supply voltage, signal input range, static accuracy, maximal sampling rate, signal to noise ratio and power dissipation. Then, a Figure-Of-Merit is formed and its evolution is reported in function of time. It shows that SI circuits are less sensitive to the supply voltage scaling than SC circuits as long as transistors operate in the strong inversion region. But, as gate-source overdrive is finally reduced with supply voltage, SNRSI decreases down to a limit calculated in weak inversion mode.",

author = "Patricia Desgreys and Antoine Tauvel and Patrick Loumeau",

year = "2002",

month = dec,

day = "1",

doi = "10.1109/ICECS.2002.1045331",

language = "English",

isbn = "0780375963",

series = "Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems",

pages = "53--56",

booktitle = "ICECS 2002 - 9th IEEE International Conference on Electronics, Circuits and Systems",

note = "9th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2002 ; Conference date: 15-09-2002 Through 18-09-2002",

}

Desgreys, P, Tauvel, A & Loumeau, P 2002, SC and SI techniques performances faced with technological advances. in ICECS 2002 - 9th IEEE International Conference on Electronics, Circuits and Systems., 1045331, Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, vol. 1, pp. 53-56, 9th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2002, Dubrovnik, Croatia, 15/09/02. https://doi.org/10.1109/ICECS.2002.1045331

SC and SI techniques performances faced with technological advances. / Desgreys, Patricia; Tauvel, Antoine; Loumeau, Patrick.
ICECS 2002 - 9th IEEE International Conference on Electronics, Circuits and Systems. 2002. p. 53-56 1045331 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - SC and SI techniques performances faced with technological advances

AU - Desgreys, Patricia

AU - Tauvel, Antoine

AU - Loumeau, Patrick

PY - 2002/12/1

Y1 - 2002/12/1

N2 - This paper proposes to compare switched-capacitors (SC) and switched-currents (SI) technique performances faced with technological advances. Three cells of identical low complexity are analysed and the following performance factors are theoretically evaluated: minimal supply voltage, signal input range, static accuracy, maximal sampling rate, signal to noise ratio and power dissipation. Then, a Figure-Of-Merit is formed and its evolution is reported in function of time. It shows that SI circuits are less sensitive to the supply voltage scaling than SC circuits as long as transistors operate in the strong inversion region. But, as gate-source overdrive is finally reduced with supply voltage, SNRSI decreases down to a limit calculated in weak inversion mode.

AB - This paper proposes to compare switched-capacitors (SC) and switched-currents (SI) technique performances faced with technological advances. Three cells of identical low complexity are analysed and the following performance factors are theoretically evaluated: minimal supply voltage, signal input range, static accuracy, maximal sampling rate, signal to noise ratio and power dissipation. Then, a Figure-Of-Merit is formed and its evolution is reported in function of time. It shows that SI circuits are less sensitive to the supply voltage scaling than SC circuits as long as transistors operate in the strong inversion region. But, as gate-source overdrive is finally reduced with supply voltage, SNRSI decreases down to a limit calculated in weak inversion mode.

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DO - 10.1109/ICECS.2002.1045331

M3 - Conference contribution

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SN - 0780375963

SN - 9780780375963

T3 - Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

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BT - ICECS 2002 - 9th IEEE International Conference on Electronics, Circuits and Systems

T2 - 9th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2002

Y2 - 15 September 2002 through 18 September 2002

ER -

SC and SI techniques performances faced with technological advances

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