Scanning tunneling microscopy observation of a mott-insulator phase at the 1T-TaSe2 surface

S. Colonna; F. Ronci; A. Cricenti; L. Perfetti; H. Berger; M. Grioni

doi:10.1143/JJAP.45.1950

Scanning tunneling microscopy observation of a mott-insulator phase at the 1T-TaSe₂ surface

S. Colonna, F. Ronci, A. Cricenti, L. Perfetti, H. Berger, M. Grioni

Research output: Contribution to journal › Article › peer-review

Abstract

We present scanning tunneling microscopy (STM) measurements at the TaSe₂ surface showing a first order process leading to a surface Mott transition. This metal to insulator transition is triggered by the commensurate charge density wave (CDW) which set up at 475 K. The electronic structure rearrangement due to the new periodicity gives rise to a half filled sub-band prone to the localization phenomena. This transition results fully developed below 250 K in agreement with previous photoemission measurements.

Original language	English
Pages (from-to)	1950-1952
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	3 B
DOIs	https://doi.org/10.1143/JJAP.45.1950
Publication status	Published - 27 Mar 2006
Externally published	Yes

Keywords

Carge density wave
Mott transition
STM
TaSe

Access to Document

10.1143/JJAP.45.1950

Cite this

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title = "Scanning tunneling microscopy observation of a mott-insulator phase at the 1T-TaSe2 surface",

abstract = "We present scanning tunneling microscopy (STM) measurements at the TaSe2 surface showing a first order process leading to a surface Mott transition. This metal to insulator transition is triggered by the commensurate charge density wave (CDW) which set up at 475 K. The electronic structure rearrangement due to the new periodicity gives rise to a half filled sub-band prone to the localization phenomena. This transition results fully developed below 250 K in agreement with previous photoemission measurements.",

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AU - Colonna, S.

AU - Ronci, F.

AU - Cricenti, A.

AU - Perfetti, L.

AU - Berger, H.

AU - Grioni, M.

PY - 2006/3/27

Y1 - 2006/3/27

N2 - We present scanning tunneling microscopy (STM) measurements at the TaSe2 surface showing a first order process leading to a surface Mott transition. This metal to insulator transition is triggered by the commensurate charge density wave (CDW) which set up at 475 K. The electronic structure rearrangement due to the new periodicity gives rise to a half filled sub-band prone to the localization phenomena. This transition results fully developed below 250 K in agreement with previous photoemission measurements.

AB - We present scanning tunneling microscopy (STM) measurements at the TaSe2 surface showing a first order process leading to a surface Mott transition. This metal to insulator transition is triggered by the commensurate charge density wave (CDW) which set up at 475 K. The electronic structure rearrangement due to the new periodicity gives rise to a half filled sub-band prone to the localization phenomena. This transition results fully developed below 250 K in agreement with previous photoemission measurements.

KW - Carge density wave

KW - Mott transition

KW - STM

KW - TaSe

U2 - 10.1143/JJAP.45.1950

DO - 10.1143/JJAP.45.1950

M3 - Article

AN - SCOPUS:33645521843

SN - 0021-4922

VL - 45

SP - 1950

EP - 1952

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 3 B