Self-compensation in halogen doped CdTe grown by molecular beam epitaxy

F. Fischer; A. Waag; L. Worschech; W. Ossau; S. Scholl; G. Landwehr; J. Mäkinen; P. Hautojärvi; C. Corbel

doi:10.1016/0022-0248(95)00646-X

Self-compensation in halogen doped CdTe grown by molecular beam epitaxy

F. Fischer
, A. Waag
, L. Worschech
, W. Ossau
, S. Scholl
, G. Landwehr
, J. Mäkinen
, P. Hautojärvi
, C. Corbel

University of Würzburg
Aalto University
Institut Pierre Simon Laplace, CNRS and CEA

Research output: Contribution to journal › Article › peer-review

Abstract

The origin of a compensation mechanism in highly halogen doped CdTe grown by molecular beam epitaxy is investigated by means of electrical transport, photoluminescence and positron annihilation measurements. From the data one can identify vacancies to play an important part in the compensation mechanism at high doping levels. The behaviour of highly doped compensated CdTe layers in the electrical transport measurements as well as in photoluminescence turned out to be dominated by potential fluctuations, which are probably created due to the random distribution of donor impurities and compensating defects.

Original language	English
Pages (from-to)	214-218
Number of pages	5
Journal	Journal of Crystal Growth
Volume	161
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00646-X
Publication status	Published - 1 Jan 1996
Externally published	Yes

Access to Document

10.1016/0022-0248(95)00646-X

Cite this

@article{36a78514219843b49cc8706d4dd50994,

title = "Self-compensation in halogen doped CdTe grown by molecular beam epitaxy",

abstract = "The origin of a compensation mechanism in highly halogen doped CdTe grown by molecular beam epitaxy is investigated by means of electrical transport, photoluminescence and positron annihilation measurements. From the data one can identify vacancies to play an important part in the compensation mechanism at high doping levels. The behaviour of highly doped compensated CdTe layers in the electrical transport measurements as well as in photoluminescence turned out to be dominated by potential fluctuations, which are probably created due to the random distribution of donor impurities and compensating defects.",

author = "F. Fischer and A. Waag and L. Worschech and W. Ossau and S. Scholl and G. Landwehr and J. M{\"a}kinen and P. Hautoj{\"a}rvi and C. Corbel",

year = "1996",

month = jan,

day = "1",

doi = "10.1016/0022-0248(95)00646-X",

language = "English",

volume = "161",

pages = "214--218",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

number = "1-4",

}

TY - JOUR

T1 - Self-compensation in halogen doped CdTe grown by molecular beam epitaxy

AU - Fischer, F.

AU - Waag, A.

AU - Worschech, L.

AU - Ossau, W.

AU - Scholl, S.

AU - Landwehr, G.

AU - Mäkinen, J.

AU - Hautojärvi, P.

AU - Corbel, C.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - The origin of a compensation mechanism in highly halogen doped CdTe grown by molecular beam epitaxy is investigated by means of electrical transport, photoluminescence and positron annihilation measurements. From the data one can identify vacancies to play an important part in the compensation mechanism at high doping levels. The behaviour of highly doped compensated CdTe layers in the electrical transport measurements as well as in photoluminescence turned out to be dominated by potential fluctuations, which are probably created due to the random distribution of donor impurities and compensating defects.

AB - The origin of a compensation mechanism in highly halogen doped CdTe grown by molecular beam epitaxy is investigated by means of electrical transport, photoluminescence and positron annihilation measurements. From the data one can identify vacancies to play an important part in the compensation mechanism at high doping levels. The behaviour of highly doped compensated CdTe layers in the electrical transport measurements as well as in photoluminescence turned out to be dominated by potential fluctuations, which are probably created due to the random distribution of donor impurities and compensating defects.

UR - https://www.scopus.com/pages/publications/0030124801

U2 - 10.1016/0022-0248(95)00646-X

DO - 10.1016/0022-0248(95)00646-X

M3 - Article

AN - SCOPUS:0030124801

SN - 0022-0248

VL - 161

SP - 214

EP - 218

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Self-compensation in halogen doped CdTe grown by molecular beam epitaxy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this