Self-formation of SiGe oxide, Ge, and void multilayers via thermal oxidation of hydrogenated epitaxial SiGe films

Junyang An; Ruiling Gong; Xinyu Li; Ileana Florea; Lise Watrin; Pere Roca i Cabarrocas; Wanghua Chen

doi:10.1016/j.vacuum.2023.112072

Self-formation of SiGe oxide, Ge, and void multilayers via thermal oxidation of hydrogenated epitaxial SiGe films

Junyang An, Ruiling Gong, Xinyu Li, Ileana Florea, Lise Watrin, Pere Roca i Cabarrocas, Wanghua Chen

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, hydrogenated SiGe thin films epitaxially grown on crystalline Si (c-Si) at 175 °C are annealed at 800 °C in a low vacuum system. The influence of H from the thin film and residual O atoms in the vacuum system on the structural changes of SiGe is presented. Multilayers consisting of c-Si/SiGe/void/Ge/SiO_x/SiGeO_x are obtained by taking advantage of the hydrogen present in the epitaxial SiGe layer. Various annealing conditions are applied to study the evolution of SiGe layers. The surface morphology, crystallinity, composition and micro structure of the multilayer stack formed during the annealing process are investigated in detail. A discussion based on the diffusion of H and O atoms is presented to account for this extraordinary process.

Original language	English
Article number	112072
Journal	Vacuum
Volume	213
DOIs	https://doi.org/10.1016/j.vacuum.2023.112072
Publication status	Published - 1 Jul 2023

Access to Document

10.1016/j.vacuum.2023.112072

Cite this

@article{09d4b94a0dde464f99ab5264590be27b,

title = "Self-formation of SiGe oxide, Ge, and void multilayers via thermal oxidation of hydrogenated epitaxial SiGe films",

abstract = "In this work, hydrogenated SiGe thin films epitaxially grown on crystalline Si (c-Si) at 175 °C are annealed at 800 °C in a low vacuum system. The influence of H from the thin film and residual O atoms in the vacuum system on the structural changes of SiGe is presented. Multilayers consisting of c-Si/SiGe/void/Ge/SiOx/SiGeOx are obtained by taking advantage of the hydrogen present in the epitaxial SiGe layer. Various annealing conditions are applied to study the evolution of SiGe layers. The surface morphology, crystallinity, composition and micro structure of the multilayer stack formed during the annealing process are investigated in detail. A discussion based on the diffusion of H and O atoms is presented to account for this extraordinary process.",

author = "Junyang An and Ruiling Gong and Xinyu Li and Ileana Florea and Lise Watrin and \{Roca i Cabarrocas\}, Pere and Wanghua Chen",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier Ltd",

year = "2023",

month = jul,

day = "1",

doi = "10.1016/j.vacuum.2023.112072",

language = "English",

volume = "213",

journal = "Vacuum",

issn = "0042-207X",

}

TY - JOUR

T1 - Self-formation of SiGe oxide, Ge, and void multilayers via thermal oxidation of hydrogenated epitaxial SiGe films

AU - An, Junyang

AU - Gong, Ruiling

AU - Li, Xinyu

AU - Florea, Ileana

AU - Watrin, Lise

AU - Roca i Cabarrocas, Pere

AU - Chen, Wanghua

PY - 2023/7/1

Y1 - 2023/7/1

N2 - In this work, hydrogenated SiGe thin films epitaxially grown on crystalline Si (c-Si) at 175 °C are annealed at 800 °C in a low vacuum system. The influence of H from the thin film and residual O atoms in the vacuum system on the structural changes of SiGe is presented. Multilayers consisting of c-Si/SiGe/void/Ge/SiOx/SiGeOx are obtained by taking advantage of the hydrogen present in the epitaxial SiGe layer. Various annealing conditions are applied to study the evolution of SiGe layers. The surface morphology, crystallinity, composition and micro structure of the multilayer stack formed during the annealing process are investigated in detail. A discussion based on the diffusion of H and O atoms is presented to account for this extraordinary process.

AB - In this work, hydrogenated SiGe thin films epitaxially grown on crystalline Si (c-Si) at 175 °C are annealed at 800 °C in a low vacuum system. The influence of H from the thin film and residual O atoms in the vacuum system on the structural changes of SiGe is presented. Multilayers consisting of c-Si/SiGe/void/Ge/SiOx/SiGeOx are obtained by taking advantage of the hydrogen present in the epitaxial SiGe layer. Various annealing conditions are applied to study the evolution of SiGe layers. The surface morphology, crystallinity, composition and micro structure of the multilayer stack formed during the annealing process are investigated in detail. A discussion based on the diffusion of H and O atoms is presented to account for this extraordinary process.

U2 - 10.1016/j.vacuum.2023.112072

DO - 10.1016/j.vacuum.2023.112072

M3 - Article

AN - SCOPUS:85151809193

SN - 0042-207X

VL - 213

JO - Vacuum

JF - Vacuum

M1 - 112072

ER -

Self-formation of SiGe oxide, Ge, and void multilayers via thermal oxidation of hydrogenated epitaxial SiGe films

Abstract

Access to Document

Fingerprint

Cite this