Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser

K. Merghem; A. Akrout; A. Martinez; G. Moreau; J. P. Tourrenc; F. Lelarge; F. Van Dijk; G. H. Duan; G. Aubin; A. Ramdane

doi:10.1364/OE.16.010675

Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser

K. Merghem
, A. Akrout
, A. Martinez
, G. Moreau
, J. P. Tourrenc
, F. Lelarge
, F. Van Dijk
, G. H. Duan
, G. Aubin
, A. Ramdane

Centre national de la recherche scientifique
Alcatel-Thales III-V Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on a low optical confinement single InGaAsP/InP quantum well active layer grown in one epitaxial step. Systematic investigation of the performances of two-section MLLs emitting at 1.54 (xm evidenced pulse width of 860 fs at 21.31 GHz repetition rate, peak power of ∼500 mW and a time-bandwith product of 0.57. A 30 kHz linewidth of the photodetected radio-frequency electrical spectrum is further demonstrated at 21 GHz which is, to our knowledge, the lowest value ever reported for a quantum well device.

Original language	English
Pages (from-to)	10675-10683
Number of pages	9
Journal	Optics Express
Volume	16
Issue number	14
DOIs	https://doi.org/10.1364/OE.16.010675
Publication status	Published - 7 Jul 2008

Access to Document

10.1364/OE.16.010675

Cite this

@article{ae1aa45fefc2414d830a0d34bd7b307f,

title = "Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser",

abstract = "We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on a low optical confinement single InGaAsP/InP quantum well active layer grown in one epitaxial step. Systematic investigation of the performances of two-section MLLs emitting at 1.54 (xm evidenced pulse width of 860 fs at 21.31 GHz repetition rate, peak power of ∼500 mW and a time-bandwith product of 0.57. A 30 kHz linewidth of the photodetected radio-frequency electrical spectrum is further demonstrated at 21 GHz which is, to our knowledge, the lowest value ever reported for a quantum well device.",

author = "K. Merghem and A. Akrout and A. Martinez and G. Moreau and Tourrenc, \{J. P.\} and F. Lelarge and \{Van Dijk\}, F. and Duan, \{G. H.\} and G. Aubin and A. Ramdane",

year = "2008",

month = jul,

day = "7",

doi = "10.1364/OE.16.010675",

language = "English",

volume = "16",

pages = "10675--10683",

journal = "Optics Express",

issn = "1094-4087",

number = "14",

}

TY - JOUR

T1 - Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser

AU - Merghem, K.

AU - Akrout, A.

AU - Martinez, A.

AU - Moreau, G.

AU - Tourrenc, J. P.

AU - Lelarge, F.

AU - Van Dijk, F.

AU - Duan, G. H.

AU - Aubin, G.

AU - Ramdane, A.

PY - 2008/7/7

Y1 - 2008/7/7

N2 - We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on a low optical confinement single InGaAsP/InP quantum well active layer grown in one epitaxial step. Systematic investigation of the performances of two-section MLLs emitting at 1.54 (xm evidenced pulse width of 860 fs at 21.31 GHz repetition rate, peak power of ∼500 mW and a time-bandwith product of 0.57. A 30 kHz linewidth of the photodetected radio-frequency electrical spectrum is further demonstrated at 21 GHz which is, to our knowledge, the lowest value ever reported for a quantum well device.

AB - We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on a low optical confinement single InGaAsP/InP quantum well active layer grown in one epitaxial step. Systematic investigation of the performances of two-section MLLs emitting at 1.54 (xm evidenced pulse width of 860 fs at 21.31 GHz repetition rate, peak power of ∼500 mW and a time-bandwith product of 0.57. A 30 kHz linewidth of the photodetected radio-frequency electrical spectrum is further demonstrated at 21 GHz which is, to our knowledge, the lowest value ever reported for a quantum well device.

U2 - 10.1364/OE.16.010675

DO - 10.1364/OE.16.010675

M3 - Article

AN - SCOPUS:47249101638

SN - 1094-4087

VL - 16

SP - 10675

EP - 10683

JO - Optics Express

JF - Optics Express

IS - 14

ER -

Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser

Abstract

Access to Document

Fingerprint

Cite this