Short radiative lifetime of single GaAs quantum dots

J. Hours, P. Senellart, A. Cavanna, E. Peter, J. M. Gérard, J. Bloch

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report on time resolved measurements on single monolayer fluctuation GaAs quantum dots. We measure radiative lifetimes as short as 100 ps for the exciton. Studying various single quantum dots, we demonstrate that the radiative lifetime of the exciton is controlled by the quantum dot lateral size.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages771-772
Number of pages2
DOIs
Publication statusPublished - 30 Jun 2005
Externally publishedYes
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 26 Jul 200430 Jul 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/TerritoryUnited States
CityFlagstaff, AZ
Period26/07/0430/07/04

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