Shouldering in B diffusion profiles in Si: Role of di-boron diffusion

Gyeong S. Hwang; William A. Goddard

doi:10.1063/1.1619219

Shouldering in B diffusion profiles in Si: Role of di-boron diffusion

Gyeong S. Hwang
, William A. Goddard

Research output: Contribution to journal › Article › peer-review

Abstract

The influence of di-boron diffusion on evolution of B diffusion profiles was investigated. When both boron concentration and annealing temperature are very high, boron pair diffusion can become as important as boron-interstitial pair diffusion. It was shown that di-boron diffusion led to shouldering in B diffusion profiles for high temperature annealing with high B concentrations.

Original language	English
Pages (from-to)	3501-3503
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	17
DOIs	https://doi.org/10.1063/1.1619219
Publication status	Published - 27 Oct 2003
Externally published	Yes

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title = "Shouldering in B diffusion profiles in Si: Role of di-boron diffusion",

abstract = "The influence of di-boron diffusion on evolution of B diffusion profiles was investigated. When both boron concentration and annealing temperature are very high, boron pair diffusion can become as important as boron-interstitial pair diffusion. It was shown that di-boron diffusion led to shouldering in B diffusion profiles for high temperature annealing with high B concentrations.",

author = "Hwang, \{Gyeong S.\} and Goddard, \{William A.\}",

year = "2003",

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T1 - Shouldering in B diffusion profiles in Si

T2 - Role of di-boron diffusion

AU - Hwang, Gyeong S.

AU - Goddard, William A.

PY - 2003/10/27

Y1 - 2003/10/27

N2 - The influence of di-boron diffusion on evolution of B diffusion profiles was investigated. When both boron concentration and annealing temperature are very high, boron pair diffusion can become as important as boron-interstitial pair diffusion. It was shown that di-boron diffusion led to shouldering in B diffusion profiles for high temperature annealing with high B concentrations.

AB - The influence of di-boron diffusion on evolution of B diffusion profiles was investigated. When both boron concentration and annealing temperature are very high, boron pair diffusion can become as important as boron-interstitial pair diffusion. It was shown that di-boron diffusion led to shouldering in B diffusion profiles for high temperature annealing with high B concentrations.

UR - https://www.scopus.com/pages/publications/0242498432

U2 - 10.1063/1.1619219

DO - 10.1063/1.1619219

M3 - Article

AN - SCOPUS:0242498432

SN - 0003-6951

VL - 83

SP - 3501

EP - 3503

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Shouldering in B diffusion profiles in Si: Role of di-boron diffusion

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