Abstract
The measurement of resonant Rayleigh scattering (RRS) in semiconductor microcavities have been investigated using ultrafast spectral interferometry. The measurements identifies the RRS component of the secondary radiation, and distinguishes between RRS and photoluminescence. The sample is a GaAs cavity with a single 8 nm Ga0.96In0.04As quantum well at the anti-node, surrounded by two Ga0.9Al0.1As/AlAs Bragg mirrors. The unambiguous identification of RRS, and its angular distribution, dynamics, and dependence on cavity detuning, provide unique complementary information on microcavities.
| Original language | English |
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| Pages | 302-303 |
| Number of pages | 2 |
| Publication status | Published - 1 Jan 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA Duration: 23 May 1999 → 28 May 1999 |
Conference
| Conference | Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) |
|---|---|
| City | Baltimore, MD, USA |
| Period | 23/05/99 → 28/05/99 |
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