Silicon Nanowire Solar Cells with μc-Si:H Absorbers for Radial Junction Devices

Letian Dai; Martin Foldyna; Alvarez José; Isabelle Maurin; Jean Paul Kleider; Thierry Gacoin; Pere Roca i Cabarrocas

doi:10.1002/pssa.202100231

Silicon Nanowire Solar Cells with μc-Si:H Absorbers for Radial Junction Devices

Letian Dai
, Martin Foldyna
, Alvarez José
, Isabelle Maurin
, Jean Paul Kleider
, Thierry Gacoin
, Pere Roca i Cabarrocas

Research output: Contribution to journal › Article › peer-review

Abstract

Silicon nanowire (SiNW) radial junction (RJ) solar cells using hydrogenated microcrystalline silicon (μc-Si:H) as absorber material have been studied. Since 2013, the performance of such RJ devices has been limited by the low fill factor (FF) and open-circuit voltage (V_OC). Thanks to the use of n-type hydrogenated microcrystalline silicon oxide (μc-SiO_x:H) as a bottom doped layer, the authors developed μc-Si:H RJ solar cells with a FF of 69.7% and a V_OC of 0.41 V yielding a power conversion efficiency of 4.1%, which is more than 40% higher than the previously published efficiency record of 2.9%. Herein, the role of n-type μc-SiO_x:H in the improvement of FF is highlighted.

Original language	English
Article number	2100231
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	218
Issue number	17
DOIs	https://doi.org/10.1002/pssa.202100231
Publication status	Published - 1 Sept 2021

Keywords

hydrogenated microcrystalline silicon oxide (μc-SiO:H), hydrogenated microcrystalline silicon (μc-Si:H)
plasma-enhanced chemical vapor deposition
radial junction solar cells
silicon nanowires

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10.1002/pssa.202100231

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title = "Silicon Nanowire Solar Cells with μc-Si:H Absorbers for Radial Junction Devices",

abstract = "Silicon nanowire (SiNW) radial junction (RJ) solar cells using hydrogenated microcrystalline silicon (μc-Si:H) as absorber material have been studied. Since 2013, the performance of such RJ devices has been limited by the low fill factor (FF) and open-circuit voltage (VOC). Thanks to the use of n-type hydrogenated microcrystalline silicon oxide (μc-SiOx:H) as a bottom doped layer, the authors developed μc-Si:H RJ solar cells with a FF of 69.7\% and a VOC of 0.41 V yielding a power conversion efficiency of 4.1\%, which is more than 40\% higher than the previously published efficiency record of 2.9\%. Herein, the role of n-type μc-SiOx:H in the improvement of FF is highlighted.",

keywords = "hydrogenated microcrystalline silicon oxide (μc-SiO:H), hydrogenated microcrystalline silicon (μc-Si:H), plasma-enhanced chemical vapor deposition, radial junction solar cells, silicon nanowires",

author = "Letian Dai and Martin Foldyna and Alvarez Jos{\'e} and Isabelle Maurin and Kleider, \{Jean Paul\} and Thierry Gacoin and \{Roca i Cabarrocas\}, Pere",

note = "Publisher Copyright: {\textcopyright} 2021 Wiley-VCH GmbH",

year = "2021",

month = sep,

day = "1",

doi = "10.1002/pssa.202100231",

language = "English",

volume = "218",

journal = "Physica Status Solidi (A) Applications and Materials Science",

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TY - JOUR

T1 - Silicon Nanowire Solar Cells with μc-Si:H Absorbers for Radial Junction Devices

AU - Dai, Letian

AU - Foldyna, Martin

AU - José, Alvarez

AU - Maurin, Isabelle

AU - Kleider, Jean Paul

AU - Gacoin, Thierry

AU - Roca i Cabarrocas, Pere

PY - 2021/9/1

Y1 - 2021/9/1

N2 - Silicon nanowire (SiNW) radial junction (RJ) solar cells using hydrogenated microcrystalline silicon (μc-Si:H) as absorber material have been studied. Since 2013, the performance of such RJ devices has been limited by the low fill factor (FF) and open-circuit voltage (VOC). Thanks to the use of n-type hydrogenated microcrystalline silicon oxide (μc-SiOx:H) as a bottom doped layer, the authors developed μc-Si:H RJ solar cells with a FF of 69.7% and a VOC of 0.41 V yielding a power conversion efficiency of 4.1%, which is more than 40% higher than the previously published efficiency record of 2.9%. Herein, the role of n-type μc-SiOx:H in the improvement of FF is highlighted.

AB - Silicon nanowire (SiNW) radial junction (RJ) solar cells using hydrogenated microcrystalline silicon (μc-Si:H) as absorber material have been studied. Since 2013, the performance of such RJ devices has been limited by the low fill factor (FF) and open-circuit voltage (VOC). Thanks to the use of n-type hydrogenated microcrystalline silicon oxide (μc-SiOx:H) as a bottom doped layer, the authors developed μc-Si:H RJ solar cells with a FF of 69.7% and a VOC of 0.41 V yielding a power conversion efficiency of 4.1%, which is more than 40% higher than the previously published efficiency record of 2.9%. Herein, the role of n-type μc-SiOx:H in the improvement of FF is highlighted.

KW - hydrogenated microcrystalline silicon oxide (μc-SiO:H), hydrogenated microcrystalline silicon (μc-Si:H)

KW - plasma-enhanced chemical vapor deposition

KW - radial junction solar cells

KW - silicon nanowires

U2 - 10.1002/pssa.202100231

DO - 10.1002/pssa.202100231

M3 - Article

AN - SCOPUS:85109365908

SN - 1862-6300

VL - 218

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 17

M1 - 2100231

ER -

Silicon Nanowire Solar Cells with μc-Si:H Absorbers for Radial Junction Devices

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Keywords

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