Silicon sub-bandgap photon linear detection in two-photon experiments: A photo-assisted Shockley-Read-Hall mechanism

B. Vest; E. Lucas; J. Jaeck; R. Haïdar; E. Rosencher

doi:10.1063/1.4788705

Silicon sub-bandgap photon linear detection in two-photon experiments: A photo-assisted Shockley-Read-Hall mechanism

B. Vest
, E. Lucas
, J. Jaeck
, R. Haïdar
, E. Rosencher

Onera
ONERA Office National d'Etudes et Recherches Aerospatiales
Département de Physique

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We investigate the linear response of silicon p-i-n diodes to sub-bandgap photons (1.4 μm-1.6 μm) that has been reported by many authors and left unexplored till then. The quantum efficiency of this mechanism is extremely low (typically 10^-9) but has a drastic influence on silicon devices harnessing two-photon absorption. We show that this linear photonic current decreases with temperature, displaying an activation energy similar to the dark current one. We show that this behaviour is consistent with a photo-assisted Shockley-Read mechanism in which the occupancy factor of a defect state in the Si band gap is influenced by the sub-band gap photon flux.

Original language	English
Article number	031105
Journal	Applied Physics Letters
Volume	102
Issue number	3
DOIs	https://doi.org/10.1063/1.4788705
Publication status	Published - 21 Jan 2013
Externally published	Yes

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title = "Silicon sub-bandgap photon linear detection in two-photon experiments: A photo-assisted Shockley-Read-Hall mechanism",

abstract = "We investigate the linear response of silicon p-i-n diodes to sub-bandgap photons (1.4 μm-1.6 μm) that has been reported by many authors and left unexplored till then. The quantum efficiency of this mechanism is extremely low (typically 10-9) but has a drastic influence on silicon devices harnessing two-photon absorption. We show that this linear photonic current decreases with temperature, displaying an activation energy similar to the dark current one. We show that this behaviour is consistent with a photo-assisted Shockley-Read mechanism in which the occupancy factor of a defect state in the Si band gap is influenced by the sub-band gap photon flux.",

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T1 - Silicon sub-bandgap photon linear detection in two-photon experiments

T2 - A photo-assisted Shockley-Read-Hall mechanism

AU - Vest, B.

AU - Lucas, E.

AU - Jaeck, J.

AU - Haïdar, R.

AU - Rosencher, E.

PY - 2013/1/21

Y1 - 2013/1/21

N2 - We investigate the linear response of silicon p-i-n diodes to sub-bandgap photons (1.4 μm-1.6 μm) that has been reported by many authors and left unexplored till then. The quantum efficiency of this mechanism is extremely low (typically 10-9) but has a drastic influence on silicon devices harnessing two-photon absorption. We show that this linear photonic current decreases with temperature, displaying an activation energy similar to the dark current one. We show that this behaviour is consistent with a photo-assisted Shockley-Read mechanism in which the occupancy factor of a defect state in the Si band gap is influenced by the sub-band gap photon flux.

AB - We investigate the linear response of silicon p-i-n diodes to sub-bandgap photons (1.4 μm-1.6 μm) that has been reported by many authors and left unexplored till then. The quantum efficiency of this mechanism is extremely low (typically 10-9) but has a drastic influence on silicon devices harnessing two-photon absorption. We show that this linear photonic current decreases with temperature, displaying an activation energy similar to the dark current one. We show that this behaviour is consistent with a photo-assisted Shockley-Read mechanism in which the occupancy factor of a defect state in the Si band gap is influenced by the sub-band gap photon flux.

U2 - 10.1063/1.4788705

DO - 10.1063/1.4788705

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VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 031105

ER -

Silicon sub-bandgap photon linear detection in two-photon experiments: A photo-assisted Shockley-Read-Hall mechanism

Abstract

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