@inproceedings{00bbec74bb754818b885e8e0980ac3fe,
title = "Simulation framework for barrier lowering in Schottky barrier MOSFETs",
abstract = "In this paper we present a simulation framework to account for the Schottky barrier lowering models in SB-MOSFETs within the Synopsys TCAD Sentaurus tool-chain. The improved Schottky barrier lowering model for field emission is considered. A strategy to extract the different current components and thus predict accurately the on- and off-current regions are adressed.",
keywords = "2D Poisson equation, DoubleGate (DG) MOSFET, Schottky barrier, Synopsys, TCAD, device modeling, field emission, framework, thermionic and tunneling current, thermionic emission",
author = "Mike Schwarz and Snyder, \{John P.\} and Tillmann Krauss and Udo Schwalke and Calvet, \{Laurie E.\} and Alexander Kloes",
note = "Publisher Copyright: {\textcopyright} 2017 Department of Microelectronics and Computer Science, Lodz University of Technology.; 24th International Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2017 ; Conference date: 22-06-2017 Through 24-06-2017",
year = "2017",
month = aug,
day = "8",
doi = "10.23919/MIXDES.2017.8005172",
language = "English",
series = "Proceedings of the 24th International Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "149--153",
editor = "Andrzej Napieralski",
booktitle = "Proceedings of the 24th International Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2017",
}