Simultaneous Bifurcation Diagrams of Carrier Number and Optical Intensity of External Cavity Laser

  • C. Y. Chang
  • , Daeyoung Choi
  • , A. Locquet
  • , Michael J. Wishon
  • , K. Merghem
  • , Abderrahim Ramdanem
  • , François Lelarge
  • , A. Martinez
  • , D. S. Citrin

Research output: Contribution to journalConference articlepeer-review

Abstract

We present a simultaneous measurement of the route to chaos of the optical intensity and carrier density as the feedback strength is increased in an external cavity semiconductor laser (ECL). The intensity is measured with a high-speed photodetector while the carrier dynamics is obtained through a measurement of the dynamic voltage across the laser diode injection terminals. Both measurements demonstrate a route to chaos that stems from the undamping of the relaxation oscillation and provide confirmation of the predictions of the Lang and Kobayashi model concerning the routes to chaos.

Original languageEnglish
Article numberJW2A.72
JournalOptics InfoBase Conference Papers
Publication statusPublished - 1 Jan 2016
EventCLEO: Applications and Technology, CLEO AT 2016 - San Jose, United States
Duration: 5 Jun 201610 Jun 2016

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