Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy

Neslihan Ayarci Kuruoǧlu; Orhan Ozdemir; Kutsal Bozkurt; Sofiane Belahsene; Anthony Martinez; Abderrahim Ramdane

doi:10.1109/TED.2017.2705719

Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy

Neslihan Ayarci Kuruoǧlu
, Orhan Ozdemir
, Kutsal Bozkurt
, Sofiane Belahsene
, Anthony Martinez
, Abderrahim Ramdane

Research output: Contribution to journal › Article › peer-review

Abstract

Temperature-and field-dependent electron and hole mobilities were simultaneously derived from admittance measurements on an InP/InGaAsP/InAs/InP long wavelength laser structure. Each carrier's mobility was separated in the frequency domain due to the corresponding different relaxation times from {C} versus log {f} curves. Derived electron and hole mobilities followed the Poole-Frenkel-Type field dependence, indicating the transport of carriers through hopping. Extracted thermal energy gap ( {\Delta } ) and disorder temperature ( {T{0}} ) values were in mutual agreement with previous current density-voltage measurements and from the energy band diagram of the present structure, constructed from other studies in the literature by photoluminescence and photoluminescence excitation experiments.

Original language	English
Article number	7935518
Pages (from-to)	2881-2885
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	7
DOIs	https://doi.org/10.1109/TED.2017.2705719
Publication status	Published - 1 Jul 2017
Externally published	Yes

Keywords

Capacitance-voltage characteristics
charge carrier mobility
p-i-n diodes

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10.1109/TED.2017.2705719

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title = "Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy",

abstract = "Temperature-and field-dependent electron and hole mobilities were simultaneously derived from admittance measurements on an InP/InGaAsP/InAs/InP long wavelength laser structure. Each carrier's mobility was separated in the frequency domain due to the corresponding different relaxation times from \{C\} versus log \{f\} curves. Derived electron and hole mobilities followed the Poole-Frenkel-Type field dependence, indicating the transport of carriers through hopping. Extracted thermal energy gap ( \{\textbackslash{}Delta \} ) and disorder temperature ( \{T\{0\}\} ) values were in mutual agreement with previous current density-voltage measurements and from the energy band diagram of the present structure, constructed from other studies in the literature by photoluminescence and photoluminescence excitation experiments.",

keywords = "Capacitance-voltage characteristics, charge carrier mobility, p-i-n diodes",

author = "Kuruoǧlu, \{Neslihan Ayarci\} and Orhan Ozdemir and Kutsal Bozkurt and Sofiane Belahsene and Anthony Martinez and Abderrahim Ramdane",

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doi = "10.1109/TED.2017.2705719",

language = "English",

volume = "64",

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TY - JOUR

T1 - Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy

AU - Kuruoǧlu, Neslihan Ayarci

AU - Ozdemir, Orhan

AU - Bozkurt, Kutsal

AU - Belahsene, Sofiane

AU - Martinez, Anthony

AU - Ramdane, Abderrahim

PY - 2017/7/1

Y1 - 2017/7/1

N2 - Temperature-and field-dependent electron and hole mobilities were simultaneously derived from admittance measurements on an InP/InGaAsP/InAs/InP long wavelength laser structure. Each carrier's mobility was separated in the frequency domain due to the corresponding different relaxation times from {C} versus log {f} curves. Derived electron and hole mobilities followed the Poole-Frenkel-Type field dependence, indicating the transport of carriers through hopping. Extracted thermal energy gap ( {\Delta } ) and disorder temperature ( {T{0}} ) values were in mutual agreement with previous current density-voltage measurements and from the energy band diagram of the present structure, constructed from other studies in the literature by photoluminescence and photoluminescence excitation experiments.

AB - Temperature-and field-dependent electron and hole mobilities were simultaneously derived from admittance measurements on an InP/InGaAsP/InAs/InP long wavelength laser structure. Each carrier's mobility was separated in the frequency domain due to the corresponding different relaxation times from {C} versus log {f} curves. Derived electron and hole mobilities followed the Poole-Frenkel-Type field dependence, indicating the transport of carriers through hopping. Extracted thermal energy gap ( {\Delta } ) and disorder temperature ( {T{0}} ) values were in mutual agreement with previous current density-voltage measurements and from the energy band diagram of the present structure, constructed from other studies in the literature by photoluminescence and photoluminescence excitation experiments.

KW - Capacitance-voltage characteristics

KW - charge carrier mobility

KW - p-i-n diodes

UR - https://www.scopus.com/pages/publications/85028341934

U2 - 10.1109/TED.2017.2705719

DO - 10.1109/TED.2017.2705719

M3 - Article

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

M1 - 7935518

ER -

Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy

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Keywords

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