Single mode TEM 00 large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate

A. Laurain; A. Michon; A. Garnache; G. Beaudoin; C. Roblin; E. Cambril; I. Sagnes

Single mode TEM ₀₀ large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate

A. Laurain
, A. Michon
, A. Garnache
, G. Beaudoin
, C. Roblin
, E. Cambril
, I. Sagnes

IES Institut d'Electronique et des Systèmes
Centre national de la recherche scientifique

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present the design, technology and performances of single-frequency GaAs-based electrically-pumped quantumwell vertical external-cavity surface-emitting lasers. We report on room-temperature continuous-wave laser emission at 1 μm with 10 mW output power. The external cavity provides a circular TEM ₀₀ beam close to diffraction limit (M ² = 1.2). The laser exhibits single frequency operation (< 30 MHz), a side mode suppression ratio > 37 dB and linear light polarization (> 20 dB). Thermal, electrical and optical properties of the device are studied.

Original language	English
Title of host publication	2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Publication status	Published - 1 Dec 2011
Event	2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 - Berlin, Germany Duration: 22 May 2011 → 26 May 2011

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Country/Territory	Germany
City	Berlin
Period	22/05/11 → 26/05/11

Cite this

Laurain, A., Michon, A., Garnache, A., Beaudoin, G., Roblin, C., Cambril, E., & Sagnes, I. (2011). Single mode TEM ₀₀ large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate. In 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 Article 5978327 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Laurain, A. ; Michon, A. ; Garnache, A. et al. / Single mode TEM ₀₀ large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011. 2011. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

@inproceedings{1b5fd52ce545468abe1b42a9a8aa7200,

title = "Single mode TEM 00 large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate",

abstract = "We present the design, technology and performances of single-frequency GaAs-based electrically-pumped quantumwell vertical external-cavity surface-emitting lasers. We report on room-temperature continuous-wave laser emission at 1 μm with 10 mW output power. The external cavity provides a circular TEM 00 beam close to diffraction limit (M 2 = 1.2). The laser exhibits single frequency operation (< 30 MHz), a side mode suppression ratio > 37 dB and linear light polarization (> 20 dB). Thermal, electrical and optical properties of the device are studied.",

author = "A. Laurain and A. Michon and A. Garnache and G. Beaudoin and C. Roblin and E. Cambril and I. Sagnes",

year = "2011",

month = dec,

day = "1",

language = "English",

isbn = "9781457717536",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

booktitle = "2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011",

note = "2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 ; Conference date: 22-05-2011 Through 26-05-2011",

}

Laurain, A, Michon, A, Garnache, A, Beaudoin, G, Roblin, C, Cambril, E & Sagnes, I 2011, Single mode TEM ₀₀ large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate. in 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011., 5978327, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, Germany, 22/05/11.

Single mode TEM ₀₀ large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate. / Laurain, A.; Michon, A.; Garnache, A. et al.
2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011. 2011. 5978327 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Single mode TEM 00 large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate

AU - Laurain, A.

AU - Michon, A.

AU - Garnache, A.

AU - Beaudoin, G.

AU - Roblin, C.

AU - Cambril, E.

AU - Sagnes, I.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We present the design, technology and performances of single-frequency GaAs-based electrically-pumped quantumwell vertical external-cavity surface-emitting lasers. We report on room-temperature continuous-wave laser emission at 1 μm with 10 mW output power. The external cavity provides a circular TEM 00 beam close to diffraction limit (M 2 = 1.2). The laser exhibits single frequency operation (< 30 MHz), a side mode suppression ratio > 37 dB and linear light polarization (> 20 dB). Thermal, electrical and optical properties of the device are studied.

AB - We present the design, technology and performances of single-frequency GaAs-based electrically-pumped quantumwell vertical external-cavity surface-emitting lasers. We report on room-temperature continuous-wave laser emission at 1 μm with 10 mW output power. The external cavity provides a circular TEM 00 beam close to diffraction limit (M 2 = 1.2). The laser exhibits single frequency operation (< 30 MHz), a side mode suppression ratio > 37 dB and linear light polarization (> 20 dB). Thermal, electrical and optical properties of the device are studied.

M3 - Conference contribution

AN - SCOPUS:84858175809

SN - 9781457717536

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

BT - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011

T2 - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011

Y2 - 22 May 2011 through 26 May 2011

ER -