Single oriented carbon nanotubes growth on array of processed microelectrodes

F. Le Normand; C. S. Cojocaru; B. Vigolo; E. Minoux; P. Legagneux; I. Kleps; F. Craciunoiu; A. Angelescu; M. Miu; M. Smion

Single oriented carbon nanotubes growth on array of processed microelectrodes

F. Le Normand
, C. S. Cojocaru
, B. Vigolo
, E. Minoux
, P. Legagneux
, I. Kleps
, F. Craciunoiu
, A. Angelescu
, M. Miu
, M. Smion

UMR 7504 CNRS-ULP
Thales Research & Technology
National Institute for Research and Development in Microtechnologies (IMT)

Research output: Contribution to conference › Paper › peer-review

Abstract

The development of field-effect devices induced a demand for very fine, high-aspect-ratio tips, suitable for scanning tunneling and force microscopy and field-effect emitter arrays. Silicon pyramidal structures field emitter array (Si-FEA) was fabricated using pure thermal silicon dioxide as a mask for selective etch. Based on a new technology of carbon nanotubes selective growth on the tip of silicon pyramidal structures the emission efficiency of the processed silicon tips could be increased. The paper present first results of this technology.

Original language	English
Pages	97-100
Number of pages	4
Publication status	Published - 1 Jan 2004
Externally published	Yes
Event	27th International Semiconductor Conference, CAS 2004 - Sinaia, Romania Duration: 4 Oct 2004 → 6 Oct 2004

Conference

Conference	27th International Semiconductor Conference, CAS 2004
Country/Territory	Romania
City	Sinaia
Period	4/10/04 → 6/10/04

Cite this

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title = "Single oriented carbon nanotubes growth on array of processed microelectrodes",

abstract = "The development of field-effect devices induced a demand for very fine, high-aspect-ratio tips, suitable for scanning tunneling and force microscopy and field-effect emitter arrays. Silicon pyramidal structures field emitter array (Si-FEA) was fabricated using pure thermal silicon dioxide as a mask for selective etch. Based on a new technology of carbon nanotubes selective growth on the tip of silicon pyramidal structures the emission efficiency of the processed silicon tips could be increased. The paper present first results of this technology.",

author = "\{Le Normand\}, F. and Cojocaru, \{C. S.\} and B. Vigolo and E. Minoux and P. Legagneux and I. Kleps and F. Craciunoiu and A. Angelescu and M. Miu and M. Smion",

year = "2004",

month = jan,

day = "1",

language = "English",

pages = "97--100",

note = "27th International Semiconductor Conference, CAS 2004 ; Conference date: 04-10-2004 Through 06-10-2004",

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TY - CONF

T1 - Single oriented carbon nanotubes growth on array of processed microelectrodes

AU - Le Normand, F.

AU - Cojocaru, C. S.

AU - Vigolo, B.

AU - Minoux, E.

AU - Legagneux, P.

AU - Kleps, I.

AU - Craciunoiu, F.

AU - Angelescu, A.

AU - Miu, M.

AU - Smion, M.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - The development of field-effect devices induced a demand for very fine, high-aspect-ratio tips, suitable for scanning tunneling and force microscopy and field-effect emitter arrays. Silicon pyramidal structures field emitter array (Si-FEA) was fabricated using pure thermal silicon dioxide as a mask for selective etch. Based on a new technology of carbon nanotubes selective growth on the tip of silicon pyramidal structures the emission efficiency of the processed silicon tips could be increased. The paper present first results of this technology.

AB - The development of field-effect devices induced a demand for very fine, high-aspect-ratio tips, suitable for scanning tunneling and force microscopy and field-effect emitter arrays. Silicon pyramidal structures field emitter array (Si-FEA) was fabricated using pure thermal silicon dioxide as a mask for selective etch. Based on a new technology of carbon nanotubes selective growth on the tip of silicon pyramidal structures the emission efficiency of the processed silicon tips could be increased. The paper present first results of this technology.

M3 - Paper

AN - SCOPUS:27844606817

SP - 97

EP - 100

T2 - 27th International Semiconductor Conference, CAS 2004

Y2 - 4 October 2004 through 6 October 2004

ER -

Single oriented carbon nanotubes growth on array of processed microelectrodes

Abstract

Conference

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Cite this