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Single particle excitations and interband recombination in very low density 2D electron gases

  • B. Jusserand
  • , M. Perrin
  • , A. Lemaître
  • , J. Bloch

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report on the controlled transfer of very low electron densities in a single GaAs quantum well from electron hole pairs photoexcited in neighboring narrow quantum wells. Single particle excitation Raman scattering line shapes are in perfect agreement with the Lindhard dielectric function for electron densities well below 1010 cm-2, a density where exchange-correlation is expected to play an essential role in the collective behavior of the electron gas.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages411-412
Number of pages2
DOIs
Publication statusPublished - 1 Dec 2007
Externally publishedYes
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 24 Jul 200628 Jul 2006

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/TerritoryAustria
CityVienna
Period24/07/0628/07/06

Keywords

  • Doped quantum wells
  • Electron gas
  • Electronic Raman scattering
  • Fermi edge singularity
  • GaAs

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