TY - JOUR
T1 - SiON large area deposition with a deep-UV flash argon/krypton lamp array
AU - Flicstein, J.
AU - Mba, J.
AU - Lescaut, B.
AU - Vitel, Y.
AU - Ossart, P.
AU - Licoppe, C.
PY - 1996/1/1
Y1 - 1996/1/1
N2 - Silicon oxynitride, SiO x N y (x, y ∼ 1), grown by flash deep-ultraviolet chemical vapor deposition (FUV CVD) has attractive optical, electrical, mechanical and chemical properties which make it a suitable dielectric with low dielectric constant for both microelectronics and photonics applications. At low temperatures (300-400°C) large area nearby-stoichiometric films are deposited. At different precursor flow ratios, SiO x N y , films are obtained with variable x and y. This allows variation of optical functions with x and y. FUV CVD films are low in hydrogen and free of water and hydroxyl. Since the deposition temperature is significantly lower than that observed in other conventional techniques, they are essentially free of stress.
AB - Silicon oxynitride, SiO x N y (x, y ∼ 1), grown by flash deep-ultraviolet chemical vapor deposition (FUV CVD) has attractive optical, electrical, mechanical and chemical properties which make it a suitable dielectric with low dielectric constant for both microelectronics and photonics applications. At low temperatures (300-400°C) large area nearby-stoichiometric films are deposited. At different precursor flow ratios, SiO x N y , films are obtained with variable x and y. This allows variation of optical functions with x and y. FUV CVD films are low in hydrogen and free of water and hydroxyl. Since the deposition temperature is significantly lower than that observed in other conventional techniques, they are essentially free of stress.
U2 - 10.1016/S0169-4332(96)00375-3
DO - 10.1016/S0169-4332(96)00375-3
M3 - Article
AN - SCOPUS:0030566084
SN - 0169-4332
VL - 106
SP - 44
EP - 50
JO - Applied Surface Science
JF - Applied Surface Science
ER -