SiOxpatterned based substrates implemented in Cu(InGa)Se2ultrathin solar cells: Optimum thickness

Kevin Oliveira; Wei Chao Chen; Jackson Lontchi; Antonio J.N. Oliveira; Jennifer P. Teixeira; Denis Flandre; Marika Edoff; Paulo A. Fernandes; Pedro M.P. Salome

doi:10.1109/PVSC43889.2021.9518516

SiO_xpatterned based substrates implemented in Cu(InGa)Se₂ultrathin solar cells: Optimum thickness

Kevin Oliveira, Wei Chao Chen, Jackson Lontchi, Antonio J.N. Oliveira, Jennifer P. Teixeira, Denis Flandre, Marika Edoff, Paulo A. Fernandes, Pedro M.P. Salome

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Interface recombination in sub-μm optoelectronic devices has a major harmful impact in devices performance, showing the need for tailored passivation strategies in order to reach a technological boost. In this work, SiOx based substrates were developed and integrated in ultrathin CIGS solar cells. This study aims at understanding the impact of several SiOx layer thicknesses (3, 8 and 25 nm) when this material is used as a passivation layer. Analysing their electrical parameters, the 8 nm novel SiOx based substrates achieved light to power conversion efficiency values up to 13.2%, a 1.3% absolute improvement over the conventional substrate (without SiOx).

Original language	English
Title of host publication	2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	928-930
Number of pages	3
ISBN (Electronic)	9781665419222
DOIs	https://doi.org/10.1109/PVSC43889.2021.9518516
Publication status	Published - 20 Jun 2021
Externally published	Yes
Event	48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: 20 Jun 2021 → 25 Jun 2021

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/Territory	United States
City	Fort Lauderdale
Period	20/06/21 → 25/06/21

Keywords

Cu(In
Ga)Se2
Rear Passivation Strategy
SiOx

Access to Document

10.1109/PVSC43889.2021.9518516

Cite this

Oliveira, K., Chen, W. C., Lontchi, J., Oliveira, A. J. N., Teixeira, J. P., Flandre, D., Edoff, M., Fernandes, P. A., & Salome, P. M. P. (2021). SiO_xpatterned based substrates implemented in Cu(InGa)Se₂ultrathin solar cells: Optimum thickness. In 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021 (pp. 928-930). (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC43889.2021.9518516

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title = "SiOxpatterned based substrates implemented in Cu(InGa)Se2ultrathin solar cells: Optimum thickness",

abstract = "Interface recombination in sub-μm optoelectronic devices has a major harmful impact in devices performance, showing the need for tailored passivation strategies in order to reach a technological boost. In this work, SiOx based substrates were developed and integrated in ultrathin CIGS solar cells. This study aims at understanding the impact of several SiOx layer thicknesses (3, 8 and 25 nm) when this material is used as a passivation layer. Analysing their electrical parameters, the 8 nm novel SiOx based substrates achieved light to power conversion efficiency values up to 13.2\%, a 1.3\% absolute improvement over the conventional substrate (without SiOx).",

keywords = "Cu(In, Ga)Se2, Rear Passivation Strategy, SiOx",

author = "Kevin Oliveira and Chen, \{Wei Chao\} and Jackson Lontchi and Oliveira, \{Antonio J.N.\} and Teixeira, \{Jennifer P.\} and Denis Flandre and Marika Edoff and Fernandes, \{Paulo A.\} and Salome, \{Pedro M.P.\}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 ; Conference date: 20-06-2021 Through 25-06-2021",

year = "2021",

month = jun,

day = "20",

doi = "10.1109/PVSC43889.2021.9518516",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "928--930",

booktitle = "2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021",

}

Oliveira, K, Chen, WC, Lontchi, J, Oliveira, AJN, Teixeira, JP, Flandre, D, Edoff, M, Fernandes, PA & Salome, PMP 2021, SiO_xpatterned based substrates implemented in Cu(InGa)Se₂ultrathin solar cells: Optimum thickness. in 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 928-930, 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, United States, 20/06/21. https://doi.org/10.1109/PVSC43889.2021.9518516

SiO_xpatterned based substrates implemented in Cu(InGa)Se₂ultrathin solar cells: Optimum thickness. / Oliveira, Kevin; Chen, Wei Chao; Lontchi, Jackson et al.
2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 928-930 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021

AU - Oliveira, Kevin

AU - Chen, Wei Chao

AU - Lontchi, Jackson

AU - Oliveira, Antonio J.N.

AU - Teixeira, Jennifer P.

AU - Flandre, Denis

AU - Edoff, Marika

AU - Fernandes, Paulo A.

AU - Salome, Pedro M.P.

PY - 2021/6/20

Y1 - 2021/6/20

N2 - Interface recombination in sub-μm optoelectronic devices has a major harmful impact in devices performance, showing the need for tailored passivation strategies in order to reach a technological boost. In this work, SiOx based substrates were developed and integrated in ultrathin CIGS solar cells. This study aims at understanding the impact of several SiOx layer thicknesses (3, 8 and 25 nm) when this material is used as a passivation layer. Analysing their electrical parameters, the 8 nm novel SiOx based substrates achieved light to power conversion efficiency values up to 13.2%, a 1.3% absolute improvement over the conventional substrate (without SiOx).

AB - Interface recombination in sub-μm optoelectronic devices has a major harmful impact in devices performance, showing the need for tailored passivation strategies in order to reach a technological boost. In this work, SiOx based substrates were developed and integrated in ultrathin CIGS solar cells. This study aims at understanding the impact of several SiOx layer thicknesses (3, 8 and 25 nm) when this material is used as a passivation layer. Analysing their electrical parameters, the 8 nm novel SiOx based substrates achieved light to power conversion efficiency values up to 13.2%, a 1.3% absolute improvement over the conventional substrate (without SiOx).

KW - Cu(In

KW - Ga)Se2

KW - Rear Passivation Strategy

KW - SiOx

U2 - 10.1109/PVSC43889.2021.9518516

DO - 10.1109/PVSC43889.2021.9518516

M3 - Conference contribution

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BT - 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021

PB - Institute of Electrical and Electronics Engineers Inc.

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Oliveira K, Chen WC, Lontchi J, Oliveira AJN, Teixeira JP, Flandre D et al. SiO_xpatterned based substrates implemented in Cu(InGa)Se₂ultrathin solar cells: Optimum thickness. In 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 928-930. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC43889.2021.9518516