Size Distribution of Embedded Nano-Crystallites in Polymorphous Silicon Studied by Raman Spectroscopy and Photoluminescence

V. Tripathi; Y. N. Mohapatra; Md N. Islam; V. Suendo; P. Roca i Cabarrocas

doi:10.1557/proc-762-a19.7

Size Distribution of Embedded Nano-Crystallites in Polymorphous Silicon Studied by Raman Spectroscopy and Photoluminescence

V. Tripathi, Y. N. Mohapatra, Md N. Islam, V. Suendo, P. Roca i Cabarrocas

Research output: Contribution to journal › Conference article › peer-review

Abstract

Polymorphous Silicon (pm-Si:H) deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) has emerged as an alternative material to amorphous silicon (a-Si:H). Deposition parameters of pm-Si:H are such that small crystallites get embedded in a relaxed amorphous silicon matrix, thus improving the optical and electrical properties. We study the size of crystallites and degree of order in pm-Si:H using Raman and photoluminescence (PL) spectra of pm-Si:H and a-Si:H. Raman Spectra of a variety of hydrogenated nanostructured silicon (pm-Si:H) and amorphous Silicon (a-Si:H) samples grown at different pressures were analyzed. Deconvolution of observed multiple peaks in photoluminescence spectra and fitting to Gaussian size distribution also yields particle size to be in the range of 2.3 to 3.5nm in agreement with Transmission Electron Microscopy and Raman results.

Original language	English
Pages (from-to)	105-110
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	762
DOIs	https://doi.org/10.1557/proc-762-a19.7
Publication status	Published - 1 Jan 2003
Event	Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States Duration: 22 Apr 2003 → 25 Apr 2003

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@article{1168ae9c65504a7b897715596ddc32a5,

title = "Size Distribution of Embedded Nano-Crystallites in Polymorphous Silicon Studied by Raman Spectroscopy and Photoluminescence",

abstract = "Polymorphous Silicon (pm-Si:H) deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) has emerged as an alternative material to amorphous silicon (a-Si:H). Deposition parameters of pm-Si:H are such that small crystallites get embedded in a relaxed amorphous silicon matrix, thus improving the optical and electrical properties. We study the size of crystallites and degree of order in pm-Si:H using Raman and photoluminescence (PL) spectra of pm-Si:H and a-Si:H. Raman Spectra of a variety of hydrogenated nanostructured silicon (pm-Si:H) and amorphous Silicon (a-Si:H) samples grown at different pressures were analyzed. Deconvolution of observed multiple peaks in photoluminescence spectra and fitting to Gaussian size distribution also yields particle size to be in the range of 2.3 to 3.5nm in agreement with Transmission Electron Microscopy and Raman results.",

author = "V. Tripathi and Mohapatra, \{Y. N.\} and Islam, \{Md N.\} and V. Suendo and \{Roca i Cabarrocas\}, P.",

year = "2003",

month = jan,

day = "1",

doi = "10.1557/proc-762-a19.7",

language = "English",

volume = "762",

pages = "105--110",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 ; Conference date: 22-04-2003 Through 25-04-2003",

}

TY - JOUR

T1 - Size Distribution of Embedded Nano-Crystallites in Polymorphous Silicon Studied by Raman Spectroscopy and Photoluminescence

AU - Tripathi, V.

AU - Mohapatra, Y. N.

AU - Islam, Md N.

AU - Suendo, V.

AU - Roca i Cabarrocas, P.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - Polymorphous Silicon (pm-Si:H) deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) has emerged as an alternative material to amorphous silicon (a-Si:H). Deposition parameters of pm-Si:H are such that small crystallites get embedded in a relaxed amorphous silicon matrix, thus improving the optical and electrical properties. We study the size of crystallites and degree of order in pm-Si:H using Raman and photoluminescence (PL) spectra of pm-Si:H and a-Si:H. Raman Spectra of a variety of hydrogenated nanostructured silicon (pm-Si:H) and amorphous Silicon (a-Si:H) samples grown at different pressures were analyzed. Deconvolution of observed multiple peaks in photoluminescence spectra and fitting to Gaussian size distribution also yields particle size to be in the range of 2.3 to 3.5nm in agreement with Transmission Electron Microscopy and Raman results.

AB - Polymorphous Silicon (pm-Si:H) deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) has emerged as an alternative material to amorphous silicon (a-Si:H). Deposition parameters of pm-Si:H are such that small crystallites get embedded in a relaxed amorphous silicon matrix, thus improving the optical and electrical properties. We study the size of crystallites and degree of order in pm-Si:H using Raman and photoluminescence (PL) spectra of pm-Si:H and a-Si:H. Raman Spectra of a variety of hydrogenated nanostructured silicon (pm-Si:H) and amorphous Silicon (a-Si:H) samples grown at different pressures were analyzed. Deconvolution of observed multiple peaks in photoluminescence spectra and fitting to Gaussian size distribution also yields particle size to be in the range of 2.3 to 3.5nm in agreement with Transmission Electron Microscopy and Raman results.

U2 - 10.1557/proc-762-a19.7

DO - 10.1557/proc-762-a19.7

M3 - Conference article

AN - SCOPUS:1642520715

SN - 0272-9172

VL - 762

SP - 105

EP - 110

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003

Y2 - 22 April 2003 through 25 April 2003

ER -

Size Distribution of Embedded Nano-Crystallites in Polymorphous Silicon Studied by Raman Spectroscopy and Photoluminescence

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