Abstract
We developed an improved model in order to predict the RF behavior of the SOA valid for any experimental conditions. It takes into account the dynamic saturation of the SOA, which can be fully characterized by a simple measurement, and only relies on material fitting parameters, independent of the optical intensity and bias current. We used this new model to analyze and model the additive noise of the SOA in order to fully characterize the influence of the slow light effect on the microwave photonics link properties. To cite this article: P. Berger et al., C. R. Physique 10 (2009).
| Original language | English |
|---|---|
| Pages (from-to) | 991-999 |
| Number of pages | 9 |
| Journal | Comptes Rendus Physique |
| Volume | 10 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1 Dec 2009 |
| Externally published | Yes |
Keywords
- Microwave photonics
- Noise
- Semiconductor optical amplifiers (SOA)
- Slow light