Soft X-ray photoemission study of nitrogen diffusion in TiN/HfO:N gate stacks

E. Martinez; C. Gaumer; S. Lhostis; C. Licitra; M. Silly; F. Sirotti; O. Renault

doi:10.1016/j.apsusc.2011.03.144

Soft X-ray photoemission study of nitrogen diffusion in TiN/HfO:N gate stacks

E. Martinez, C. Gaumer, S. Lhostis, C. Licitra, M. Silly, F. Sirotti, O. Renault

Research output: Contribution to journal › Article › peer-review

Abstract

The impact of HfO:N post nitridation anneal (PNA) and gate fabrication on the physico-chemical properties of the TiN/HfO:N/SiO ₂ /Si stack are investigated using Soft X-ray Photoelectron Spectroscopy (S-XPS) and Vacuum UltraViolet Spectroscopic Ellipsometry (VUV-SE). Defects created in the high-k during plasma nitridation are passivated by PNA under O ₂ . Both oxygen and nitrogen diffusion is observed towards the bottom SiO ₂ /Si interface together with a regrowth of the SiO ₂ . These defects play a major role regarding nitrogen diffusion during gate fabrication. Without PNA, no diffusion is observed because O and N atoms are trapped inside the high-k. With PNA and simultaneous defects passivation, nitrogen from both metal gate and high-k diffuses towards the bottom SiO ₂ /Si interface.

Original language	English
Pages (from-to)	2107-2112
Number of pages	6
Journal	Applied Surface Science
Volume	258
Issue number	6
DOIs	https://doi.org/10.1016/j.apsusc.2011.03.144
Publication status	Published - 1 Jan 2012
Externally published	Yes

Keywords

Diffusion
HfO:N
Metal/high-k stack
Nitrogen
S-XPS
TiN
VUV-SE

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10.1016/j.apsusc.2011.03.144

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title = "Soft X-ray photoemission study of nitrogen diffusion in TiN/HfO:N gate stacks",

abstract = " The impact of HfO:N post nitridation anneal (PNA) and gate fabrication on the physico-chemical properties of the TiN/HfO:N/SiO 2 /Si stack are investigated using Soft X-ray Photoelectron Spectroscopy (S-XPS) and Vacuum UltraViolet Spectroscopic Ellipsometry (VUV-SE). Defects created in the high-k during plasma nitridation are passivated by PNA under O 2 . Both oxygen and nitrogen diffusion is observed towards the bottom SiO 2 /Si interface together with a regrowth of the SiO 2 . These defects play a major role regarding nitrogen diffusion during gate fabrication. Without PNA, no diffusion is observed because O and N atoms are trapped inside the high-k. With PNA and simultaneous defects passivation, nitrogen from both metal gate and high-k diffuses towards the bottom SiO 2 /Si interface.",

keywords = "Diffusion, HfO:N, Metal/high-k stack, Nitrogen, S-XPS, TiN, VUV-SE",

author = "E. Martinez and C. Gaumer and S. Lhostis and C. Licitra and M. Silly and F. Sirotti and O. Renault",

year = "2012",

month = jan,

day = "1",

doi = "10.1016/j.apsusc.2011.03.144",

language = "English",

volume = "258",

pages = "2107--2112",

journal = "Applied Surface Science",

issn = "0169-4332",

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TY - JOUR

T1 - Soft X-ray photoemission study of nitrogen diffusion in TiN/HfO:N gate stacks

AU - Martinez, E.

AU - Gaumer, C.

AU - Lhostis, S.

AU - Licitra, C.

AU - Silly, M.

AU - Sirotti, F.

AU - Renault, O.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - The impact of HfO:N post nitridation anneal (PNA) and gate fabrication on the physico-chemical properties of the TiN/HfO:N/SiO 2 /Si stack are investigated using Soft X-ray Photoelectron Spectroscopy (S-XPS) and Vacuum UltraViolet Spectroscopic Ellipsometry (VUV-SE). Defects created in the high-k during plasma nitridation are passivated by PNA under O 2 . Both oxygen and nitrogen diffusion is observed towards the bottom SiO 2 /Si interface together with a regrowth of the SiO 2 . These defects play a major role regarding nitrogen diffusion during gate fabrication. Without PNA, no diffusion is observed because O and N atoms are trapped inside the high-k. With PNA and simultaneous defects passivation, nitrogen from both metal gate and high-k diffuses towards the bottom SiO 2 /Si interface.

AB - The impact of HfO:N post nitridation anneal (PNA) and gate fabrication on the physico-chemical properties of the TiN/HfO:N/SiO 2 /Si stack are investigated using Soft X-ray Photoelectron Spectroscopy (S-XPS) and Vacuum UltraViolet Spectroscopic Ellipsometry (VUV-SE). Defects created in the high-k during plasma nitridation are passivated by PNA under O 2 . Both oxygen and nitrogen diffusion is observed towards the bottom SiO 2 /Si interface together with a regrowth of the SiO 2 . These defects play a major role regarding nitrogen diffusion during gate fabrication. Without PNA, no diffusion is observed because O and N atoms are trapped inside the high-k. With PNA and simultaneous defects passivation, nitrogen from both metal gate and high-k diffuses towards the bottom SiO 2 /Si interface.

KW - Diffusion

KW - HfO:N

KW - Metal/high-k stack

KW - Nitrogen

KW - S-XPS

KW - TiN

KW - VUV-SE

U2 - 10.1016/j.apsusc.2011.03.144

DO - 10.1016/j.apsusc.2011.03.144

M3 - Article

AN - SCOPUS:84855293639

SN - 0169-4332

VL - 258

SP - 2107

EP - 2112

JO - Applied Surface Science

JF - Applied Surface Science

IS - 6

ER -

Soft X-ray photoemission study of nitrogen diffusion in TiN/HfO:N gate stacks

Abstract

Keywords

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