Solid phase epitaxial regrowth of ion-implanted amorphized InP

C. Licoppe; Y. I. Nissim; P. Krauz; P. Henoc

doi:10.1063/1.97154

Solid phase epitaxial regrowth of ion-implanted amorphized InP

C. Licoppe, Y. I. Nissim, P. Krauz, P. Henoc

Orange Labs

Research output: Contribution to journal › Article › peer-review

Abstract

Solid phase epitaxial regrowth of implanted amorphous InP layers is shown to occur in the temperature range 230-330°C. It leads to defective monocrystalline layers. The kinetics of growth follow an activation law with activation energy E_a=1.55 eV±0.2 eV. Roughening of the amorphous/crystalline interface occurs during growth. The dependence of interface roughening on crystal orientation is studied. In all cases, it is shown that the interface is degraded much faster than in GaAs. The comparison between the two compound semiconductors is based on chemical disorder in the amorphized layer.

Original language	English
Pages (from-to)	316-318
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	6
DOIs	https://doi.org/10.1063/1.97154
Publication status	Published - 1 Dec 1986
Externally published	Yes

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title = "Solid phase epitaxial regrowth of ion-implanted amorphized InP",

abstract = "Solid phase epitaxial regrowth of implanted amorphous InP layers is shown to occur in the temperature range 230-330°C. It leads to defective monocrystalline layers. The kinetics of growth follow an activation law with activation energy Ea=1.55 eV±0.2 eV. Roughening of the amorphous/crystalline interface occurs during growth. The dependence of interface roughening on crystal orientation is studied. In all cases, it is shown that the interface is degraded much faster than in GaAs. The comparison between the two compound semiconductors is based on chemical disorder in the amorphized layer.",

author = "C. Licoppe and Nissim, \{Y. I.\} and P. Krauz and P. Henoc",

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doi = "10.1063/1.97154",

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AU - Licoppe, C.

AU - Nissim, Y. I.

AU - Krauz, P.

AU - Henoc, P.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - Solid phase epitaxial regrowth of implanted amorphous InP layers is shown to occur in the temperature range 230-330°C. It leads to defective monocrystalline layers. The kinetics of growth follow an activation law with activation energy Ea=1.55 eV±0.2 eV. Roughening of the amorphous/crystalline interface occurs during growth. The dependence of interface roughening on crystal orientation is studied. In all cases, it is shown that the interface is degraded much faster than in GaAs. The comparison between the two compound semiconductors is based on chemical disorder in the amorphized layer.

AB - Solid phase epitaxial regrowth of implanted amorphous InP layers is shown to occur in the temperature range 230-330°C. It leads to defective monocrystalline layers. The kinetics of growth follow an activation law with activation energy Ea=1.55 eV±0.2 eV. Roughening of the amorphous/crystalline interface occurs during growth. The dependence of interface roughening on crystal orientation is studied. In all cases, it is shown that the interface is degraded much faster than in GaAs. The comparison between the two compound semiconductors is based on chemical disorder in the amorphized layer.

U2 - 10.1063/1.97154

DO - 10.1063/1.97154

M3 - Article

AN - SCOPUS:0347238783

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VL - 49

SP - 316

EP - 318

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Solid phase epitaxial regrowth of ion-implanted amorphized InP

Abstract

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