Solid phase recrystallization of implanted III-V semiconductors under uniaxial stress

The effect of mechanical stress on solid phase epitaxial recrystallization of implanted amorphous III-V semiconductor layers is studied for the first time. A dual approach is used, involving either direct application of uniaxial stress on whole GaAs samples or the use of strained InGaAs layers deposited on InP substrates with indium composition as a stress control parameter. Observations show that with high applied stresses up to a few kilobars recrystallization kinetics remain unaltered. While homogeneous coherent strain does not bear any influence on interface roughness during regrowth, inhomogeneous strains due to defects greatly enhance the growth front roughness. This last result is interpreted in terms of defects acting as generating sources of additional defects during recrystallization.