Abstract
An original measurement system for nonlinear microwave power transistor characterization, using sixport reflectometers, is presented. It allows independent active tuning of the output impedances at f0 and 2f0 (multiharmonic Load-Pull) and variation of the source impedance at the input port at f0 (Source-Pull). Experimental results are shown for a commercial GaAs MESFET power transistor.
| Original language | English |
|---|---|
| Pages (from-to) | 492-493 |
| Number of pages | 2 |
| Journal | CPEM Digest (Conference on Precision Electromagnetic Measurements) |
| Publication status | Published - 1 Dec 1998 |
| Event | Proceedings of the 1998 Conference Precision Electromagnetic Measurements - Washington, DC, USA Duration: 6 Jul 1998 → 10 Jul 1998 |
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