Specific spice modeling of microcrystalline silicon TFTs

O. Moustapha; V. D. Bui; Y. Bonnassieux; J. Y. Parey

doi:10.1016/j.sse.2007.10.042

Specific spice modeling of microcrystalline silicon TFTs

O. Moustapha
, V. D. Bui
, Y. Bonnassieux
, J. Y. Parey

Institut polytechnique de Paris

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper we present a specific spice static and dynamic model of microcrystalline silicon (μc-Si) thin film transistors (TFTs) taking into account the access resistances and the capacitors contributions. The previously existing models of amorphous silicon and polysilicon TFTs were not completely suited, so we combined them to build a new specific model of μc-Si TFTs. The reliability of the model is then checked by the comparison of experimental measurements to simulations and by simulating the characteristics of some electronic devices (OLED pixels, inverters, and so on).

Original language	English
Pages (from-to)	436-442
Number of pages	7
Journal	Solid-State Electronics
Volume	52
Issue number	3
DOIs	https://doi.org/10.1016/j.sse.2007.10.042
Publication status	Published - 1 Mar 2008

Keywords

Microcrystalline silicon
Modeling
Spectre
TFTs
VerilogA

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10.1016/j.sse.2007.10.042

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AU - Moustapha, O.

AU - Bui, V. D.

AU - Bonnassieux, Y.

AU - Parey, J. Y.

PY - 2008/3/1

Y1 - 2008/3/1

N2 - In this paper we present a specific spice static and dynamic model of microcrystalline silicon (μc-Si) thin film transistors (TFTs) taking into account the access resistances and the capacitors contributions. The previously existing models of amorphous silicon and polysilicon TFTs were not completely suited, so we combined them to build a new specific model of μc-Si TFTs. The reliability of the model is then checked by the comparison of experimental measurements to simulations and by simulating the characteristics of some electronic devices (OLED pixels, inverters, and so on).

AB - In this paper we present a specific spice static and dynamic model of microcrystalline silicon (μc-Si) thin film transistors (TFTs) taking into account the access resistances and the capacitors contributions. The previously existing models of amorphous silicon and polysilicon TFTs were not completely suited, so we combined them to build a new specific model of μc-Si TFTs. The reliability of the model is then checked by the comparison of experimental measurements to simulations and by simulating the characteristics of some electronic devices (OLED pixels, inverters, and so on).

KW - Microcrystalline silicon

KW - Modeling

KW - Spectre

KW - TFTs

KW - VerilogA

U2 - 10.1016/j.sse.2007.10.042

DO - 10.1016/j.sse.2007.10.042

M3 - Article

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VL - 52

SP - 436

EP - 442

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

Specific spice modeling of microcrystalline silicon TFTs

Abstract

Keywords

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