Spectroscopy studies by reflectance and photoluminescence on shallow quantum wells AlxGa1-xAs/GaAs types

M. Chaouache; R. Chtourou; F. F. Charfi; J. Yves Marzin; J. Bloch

doi:10.1016/S0928-4931(02)00094-2

Spectroscopy studies by reflectance and photoluminescence on shallow quantum wells Al_xGa_1-xAs/GaAs types

M. Chaouache
, R. Chtourou
, F. F. Charfi
, J. Yves Marzin
, J. Bloch

École Polytechnique

University of Carthage, Institut Préparatoire aux Études Scientifiques et Techniques
Centre national de la recherche scientifique

Research output: Contribution to journal › Article › peer-review

Abstract

We report an experimental study by photoluminescene (PL) and reflectivity on shallow quantum wells of Ga_1-xAl_xAs/GaAs type performed at 10 K and varying aluminium concentration from 1.5% to 4.5%. We present an approach to the investigation of the reflectivity line shape. The calculations of the reflectance line shapes using the classical model of linear dispersion show good agreement with the experimental spectra, in particular, the two types of the line shapes: "dip" for the quantum well and "peak" for the barrier exciton.

Original language	English
Pages (from-to)	227-230
Number of pages	4
Journal	Materials Science and Engineering C
Volume	21
Issue number	1-2
DOIs	https://doi.org/10.1016/S0928-4931(02)00094-2
Publication status	Published - 1 Sept 2002

Keywords

Exciton
Line shape
Reflectance
Shallow quantum well

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10.1016/S0928-4931(02)00094-2

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title = "Spectroscopy studies by reflectance and photoluminescence on shallow quantum wells AlxGa1-xAs/GaAs types",

abstract = "We report an experimental study by photoluminescene (PL) and reflectivity on shallow quantum wells of Ga1-xAlxAs/GaAs type performed at 10 K and varying aluminium concentration from 1.5\% to 4.5\%. We present an approach to the investigation of the reflectivity line shape. The calculations of the reflectance line shapes using the classical model of linear dispersion show good agreement with the experimental spectra, in particular, the two types of the line shapes: {"}dip{"} for the quantum well and {"}peak{"} for the barrier exciton.",

keywords = "Exciton, Line shape, Reflectance, Shallow quantum well",

author = "M. Chaouache and R. Chtourou and Charfi, \{F. F.\} and Marzin, \{J. Yves\} and J. Bloch",

year = "2002",

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doi = "10.1016/S0928-4931(02)00094-2",

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T1 - Spectroscopy studies by reflectance and photoluminescence on shallow quantum wells AlxGa1-xAs/GaAs types

AU - Chaouache, M.

AU - Chtourou, R.

AU - Charfi, F. F.

AU - Marzin, J. Yves

AU - Bloch, J.

PY - 2002/9/1

Y1 - 2002/9/1

N2 - We report an experimental study by photoluminescene (PL) and reflectivity on shallow quantum wells of Ga1-xAlxAs/GaAs type performed at 10 K and varying aluminium concentration from 1.5% to 4.5%. We present an approach to the investigation of the reflectivity line shape. The calculations of the reflectance line shapes using the classical model of linear dispersion show good agreement with the experimental spectra, in particular, the two types of the line shapes: "dip" for the quantum well and "peak" for the barrier exciton.

AB - We report an experimental study by photoluminescene (PL) and reflectivity on shallow quantum wells of Ga1-xAlxAs/GaAs type performed at 10 K and varying aluminium concentration from 1.5% to 4.5%. We present an approach to the investigation of the reflectivity line shape. The calculations of the reflectance line shapes using the classical model of linear dispersion show good agreement with the experimental spectra, in particular, the two types of the line shapes: "dip" for the quantum well and "peak" for the barrier exciton.

KW - Exciton

KW - Line shape

KW - Reflectance

KW - Shallow quantum well

UR - https://www.scopus.com/pages/publications/0036740945

U2 - 10.1016/S0928-4931(02)00094-2

DO - 10.1016/S0928-4931(02)00094-2

M3 - Article

AN - SCOPUS:0036740945

SN - 0928-4931

VL - 21

SP - 227

EP - 230

JO - Materials Science and Engineering C

JF - Materials Science and Engineering C

IS - 1-2

ER -

Spectroscopy studies by reflectance and photoluminescence on shallow quantum wells Al_xGa_1-xAs/GaAs types

Abstract

Keywords

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