Abstract
The interplay between spin-dependent tunneling and Coulomb blockade in Co/Al2O3/Co tunnel junctions in which the Al2O3 layer includes a unique layer of magnetic clusters is studied. The tunneling structures are prepared by sputtering with typical cluster sizes of 3.5 nm. The spin-dependent tunneling with typical Coulomb blockade effects induced intermediate electron tunneling into clusters. The tunnel magnetoresistance ratio is approximately the same in the Coulomb blockade regime and in the room temperature regime without Coulomb blockade. The magnetic field dependence of the tunnel resistance reflects the magnetization reversal of the electrodes and cobalt clusters.
| Original language | English |
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| Pages (from-to) | 33 |
| Number of pages | 1 |
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 175 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 1 Jan 1997 |