Spin-dependent tunneling through a spin-orbit-split barrier

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Abstract

We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into account both the spin-orbit interaction and the absence of the inversion symmetry, the evanescent states in the barrier are spin split and the tunneling process can become rather involved: Depending on the crystallographic direction, the incident wave experiences spin filtering during the tunneling or a spin precession around an effective magnetic field. These results open stimulating perspectives for spin manipulation in tunnel devices.

Original languageEnglish
Title of host publicationSpintronics
DOIs
Publication statusPublished - 24 Nov 2008
EventSpintronics - San Diego, CA, United States
Duration: 10 Aug 200814 Aug 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7036
ISSN (Print)0277-786X

Conference

ConferenceSpintronics
Country/TerritoryUnited States
CitySan Diego, CA
Period10/08/0814/08/08

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