Spin-dependent tunneling through high-k LaAlO3

  • V. Garcia
  • , M. Bibes
  • , J. L. Maurice
  • , E. Jacquet
  • , K. Bouzehouane
  • , J. P. Contour
  • , A. Barthélémy

Research output: Contribution to journalArticlepeer-review

Abstract

We report on the use of the LaAlO3 (LAO) high- k dielectric as a tunnel barrier in magnetic tunnel junctions. From tunnel magnetoresistance (TMR) measurements on epitaxial La23 Sr13 MnO3 LAO La23 Sr13 MnO3 junctions, we estimate a spin polarization of 77% at low temperature for the La23 Sr13 MnO3 LAO interface. Remarkably, the TMR of La23 Sr13 MnO3 LAOCo junctions at low bias is negative, evidencing a negative spin polarization of Co at the interface with LAO, and its bias dependence is very similar to that of La23 Sr13 MnO3 SrTiO3 Co junctions. We discuss possible reasons for this behavior.

Original languageEnglish
Article number212501
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number21
DOIs
Publication statusPublished - 1 Jan 2005

Fingerprint

Dive into the research topics of 'Spin-dependent tunneling through high-k LaAlO3'. Together they form a unique fingerprint.

Cite this