Spin-dependent tunneling with Coulomb blockade

L. Schelp; A. Fert; F. Fettar; P. Holody; S. Lee; J. Maurice; F. Petroff; A. Vaurès

doi:10.1103/PhysRevB.56.R5747

Spin-dependent tunneling with Coulomb blockade

L. Schelp, A. Fert, F. Fettar, P. Holody, S. Lee, J. Maurice, F. Petroff, A. Vaurès

Université Paris-Saclay

Research output: Contribution to journal › Article › peer-review

Abstract

We have fabricated (Formula presented) tunnel junctions in which the (Formula presented) layer includes a unique layer of small and disconnected cobalt clusters, with a typical mean diameter ranging from 2.0 to 4.0 nm. We observe spin-dependent tunneling properties with, below about 50 K, typical Coulomb-blockade effects induced by intermediate electron tunneling into cobalt clusters. The tunnel magnetoresistance ratio is approximately the same in the Coulomb-blockade regime (low-temperature range with very high tunnel resistance) and in the room-temperature regime without Coulomb blockade. It also depends weakly on the applied voltage.

Original language	English
Pages (from-to)	R5747-R5750
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	56
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.56.R5747
Publication status	Published - 1 Jan 1997
Externally published	Yes

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10.1103/PhysRevB.56.R5747

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title = "Spin-dependent tunneling with Coulomb blockade",

abstract = "We have fabricated (Formula presented) tunnel junctions in which the (Formula presented) layer includes a unique layer of small and disconnected cobalt clusters, with a typical mean diameter ranging from 2.0 to 4.0 nm. We observe spin-dependent tunneling properties with, below about 50 K, typical Coulomb-blockade effects induced by intermediate electron tunneling into cobalt clusters. The tunnel magnetoresistance ratio is approximately the same in the Coulomb-blockade regime (low-temperature range with very high tunnel resistance) and in the room-temperature regime without Coulomb blockade. It also depends weakly on the applied voltage.",

author = "L. Schelp and A. Fert and F. Fettar and P. Holody and S. Lee and J. Maurice and F. Petroff and A. Vaur{\`e}s",

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T1 - Spin-dependent tunneling with Coulomb blockade

AU - Schelp, L.

AU - Fert, A.

AU - Fettar, F.

AU - Holody, P.

AU - Lee, S.

AU - Maurice, J.

AU - Petroff, F.

AU - Vaurès, A.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - We have fabricated (Formula presented) tunnel junctions in which the (Formula presented) layer includes a unique layer of small and disconnected cobalt clusters, with a typical mean diameter ranging from 2.0 to 4.0 nm. We observe spin-dependent tunneling properties with, below about 50 K, typical Coulomb-blockade effects induced by intermediate electron tunneling into cobalt clusters. The tunnel magnetoresistance ratio is approximately the same in the Coulomb-blockade regime (low-temperature range with very high tunnel resistance) and in the room-temperature regime without Coulomb blockade. It also depends weakly on the applied voltage.

AB - We have fabricated (Formula presented) tunnel junctions in which the (Formula presented) layer includes a unique layer of small and disconnected cobalt clusters, with a typical mean diameter ranging from 2.0 to 4.0 nm. We observe spin-dependent tunneling properties with, below about 50 K, typical Coulomb-blockade effects induced by intermediate electron tunneling into cobalt clusters. The tunnel magnetoresistance ratio is approximately the same in the Coulomb-blockade regime (low-temperature range with very high tunnel resistance) and in the room-temperature regime without Coulomb blockade. It also depends weakly on the applied voltage.

U2 - 10.1103/PhysRevB.56.R5747

DO - 10.1103/PhysRevB.56.R5747

M3 - Article

AN - SCOPUS:0000445116

SN - 1098-0121

VL - 56

SP - R5747-R5750

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 10

ER -

Spin-dependent tunneling with Coulomb blockade

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