Spin injection from a ferromagnetic metal into a semiconductor

H. Jaffrès; A. Fert

doi:10.1063/1.1451887

Spin injection from a ferromagnetic metal into a semiconductor

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Abstract

We calculate the spin polarization of electrons injected from a ferromagnetic metal (F) into a semiconductor (SC) or a two-dimensional semiconductor electron gas (2-DEG) and the resulting magnetoresistance (MR) of a F/SC/F structure. Due to the conductivity mismatch between F and SC, efficient spin-injection can be obtained only by inserting a tunnel junction at the F/N interfaces. We find that a F ₁/SF/F ₂ structure can present a nonzero MR if the junction resistance is chosen in a relatively narrow range determined by the spin-diffusion length and resistivity of F and SC, the distance between the ferromagnets and the width of the conduction channels. The case of a 2-DEG is particularly favorable.

Original language	English
Pages (from-to)	8111-8113
Number of pages	3
Journal	Journal of Applied Physics
Volume	91
Issue number	10 I
DOIs	https://doi.org/10.1063/1.1451887
Publication status	Published - 15 May 2002
Externally published	Yes

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abstract = "We calculate the spin polarization of electrons injected from a ferromagnetic metal (F) into a semiconductor (SC) or a two-dimensional semiconductor electron gas (2-DEG) and the resulting magnetoresistance (MR) of a F/SC/F structure. Due to the conductivity mismatch between F and SC, efficient spin-injection can be obtained only by inserting a tunnel junction at the F/N interfaces. We find that a F 1/SF/F 2 structure can present a nonzero MR if the junction resistance is chosen in a relatively narrow range determined by the spin-diffusion length and resistivity of F and SC, the distance between the ferromagnets and the width of the conduction channels. The case of a 2-DEG is particularly favorable.",

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AU - Jaffrès, H.

AU - Fert, A.

PY - 2002/5/15

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N2 - We calculate the spin polarization of electrons injected from a ferromagnetic metal (F) into a semiconductor (SC) or a two-dimensional semiconductor electron gas (2-DEG) and the resulting magnetoresistance (MR) of a F/SC/F structure. Due to the conductivity mismatch between F and SC, efficient spin-injection can be obtained only by inserting a tunnel junction at the F/N interfaces. We find that a F 1/SF/F 2 structure can present a nonzero MR if the junction resistance is chosen in a relatively narrow range determined by the spin-diffusion length and resistivity of F and SC, the distance between the ferromagnets and the width of the conduction channels. The case of a 2-DEG is particularly favorable.

AB - We calculate the spin polarization of electrons injected from a ferromagnetic metal (F) into a semiconductor (SC) or a two-dimensional semiconductor electron gas (2-DEG) and the resulting magnetoresistance (MR) of a F/SC/F structure. Due to the conductivity mismatch between F and SC, efficient spin-injection can be obtained only by inserting a tunnel junction at the F/N interfaces. We find that a F 1/SF/F 2 structure can present a nonzero MR if the junction resistance is chosen in a relatively narrow range determined by the spin-diffusion length and resistivity of F and SC, the distance between the ferromagnets and the width of the conduction channels. The case of a 2-DEG is particularly favorable.

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DO - 10.1063/1.1451887

M3 - Article

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VL - 91

SP - 8111

EP - 8113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10 I

ER -

Spin injection from a ferromagnetic metal into a semiconductor

Abstract

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