Spin-Orbit Currents, Spin-Transfer Torque and Anomalous Tunneling in III-V Heterostructures Probed by Advanced 30-and 40-Bands k · p Tunneling Methods

Duy Quang To; Thi Huong Dang; Hoai Nguyen; Viatcheslav Safarov; Jean Marie George; Henri Jean Drouhin; Henri Jaffrès

doi:10.1109/TMAG.2019.2894571

Spin-Orbit Currents, Spin-Transfer Torque and Anomalous Tunneling in III-V Heterostructures Probed by Advanced 30-and 40-Bands k · p Tunneling Methods

Duy Quang To
, Thi Huong Dang
, Hoai Nguyen
, Viatcheslav Safarov
, Jean Marie George
, Henri Jean Drouhin
, Henri Jaffrès

École Polytechnique

Research output: Contribution to journal › Article › peer-review

Abstract

On the basis of tunneling magnetoresistance (TMR) spin-transfer torque (STT) experiments in (Ga,Mn)As/GaAs/(Ga,Mn)As submicronic magnetic tunnel junctions, we have analyzed the anatomy of the spin-current profiles within the heterostructures, location of strong spin-orbit interactions. Beyond the TMR, our robust 30-and 40-band k · p numerical methods reveal the strong peculiarity of the spin-currents in the antiparallel state with the evidence of a tunneling anomalous Hall effect. Using the boundary conditions corresponding to heavy-hole (HH)-to-light-hole (LH) mixing of the relevant C2v symmetry at III-V interfaces of the junctions, we demonstrate that the efficiency of the transverse spin-current necessary to STT is surprisingly enhanced by the HH-to-LH mixing taking benefit of the lighter mass of the LH state.

Original language	English
Article number	8728038
Journal	IEEE Transactions on Magnetics
Volume	55
Issue number	7
DOIs	https://doi.org/10.1109/TMAG.2019.2894571
Publication status	Published - 1 Jul 2019

Keywords

Anomalous tunnel hall effect
ferromagnetic semiconductors
multiband k · p
spin injection
spin-transfer torque (STT)
tunneling magnetoresistance (TMR)

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10.1109/TMAG.2019.2894571

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title = "Spin-Orbit Currents, Spin-Transfer Torque and Anomalous Tunneling in III-V Heterostructures Probed by Advanced 30-and 40-Bands k · p Tunneling Methods",

abstract = "On the basis of tunneling magnetoresistance (TMR) spin-transfer torque (STT) experiments in (Ga,Mn)As/GaAs/(Ga,Mn)As submicronic magnetic tunnel junctions, we have analyzed the anatomy of the spin-current profiles within the heterostructures, location of strong spin-orbit interactions. Beyond the TMR, our robust 30-and 40-band k · p numerical methods reveal the strong peculiarity of the spin-currents in the antiparallel state with the evidence of a tunneling anomalous Hall effect. Using the boundary conditions corresponding to heavy-hole (HH)-to-light-hole (LH) mixing of the relevant C2v symmetry at III-V interfaces of the junctions, we demonstrate that the efficiency of the transverse spin-current necessary to STT is surprisingly enhanced by the HH-to-LH mixing taking benefit of the lighter mass of the LH state.",

keywords = "Anomalous tunnel hall effect, ferromagnetic semiconductors, multiband k · p, spin injection, spin-transfer torque (STT), tunneling magnetoresistance (TMR)",

author = "To, \{Duy Quang\} and Dang, \{Thi Huong\} and Hoai Nguyen and Viatcheslav Safarov and George, \{Jean Marie\} and Drouhin, \{Henri Jean\} and Henri Jaffr{\`e}s",

note = "Publisher Copyright: {\textcopyright} 1965-2012 IEEE.",

year = "2019",

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day = "1",

doi = "10.1109/TMAG.2019.2894571",

language = "English",

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T1 - Spin-Orbit Currents, Spin-Transfer Torque and Anomalous Tunneling in III-V Heterostructures Probed by Advanced 30-and 40-Bands k · p Tunneling Methods

AU - To, Duy Quang

AU - Dang, Thi Huong

AU - Nguyen, Hoai

AU - Safarov, Viatcheslav

AU - George, Jean Marie

AU - Drouhin, Henri Jean

AU - Jaffrès, Henri

PY - 2019/7/1

Y1 - 2019/7/1

N2 - On the basis of tunneling magnetoresistance (TMR) spin-transfer torque (STT) experiments in (Ga,Mn)As/GaAs/(Ga,Mn)As submicronic magnetic tunnel junctions, we have analyzed the anatomy of the spin-current profiles within the heterostructures, location of strong spin-orbit interactions. Beyond the TMR, our robust 30-and 40-band k · p numerical methods reveal the strong peculiarity of the spin-currents in the antiparallel state with the evidence of a tunneling anomalous Hall effect. Using the boundary conditions corresponding to heavy-hole (HH)-to-light-hole (LH) mixing of the relevant C2v symmetry at III-V interfaces of the junctions, we demonstrate that the efficiency of the transverse spin-current necessary to STT is surprisingly enhanced by the HH-to-LH mixing taking benefit of the lighter mass of the LH state.

AB - On the basis of tunneling magnetoresistance (TMR) spin-transfer torque (STT) experiments in (Ga,Mn)As/GaAs/(Ga,Mn)As submicronic magnetic tunnel junctions, we have analyzed the anatomy of the spin-current profiles within the heterostructures, location of strong spin-orbit interactions. Beyond the TMR, our robust 30-and 40-band k · p numerical methods reveal the strong peculiarity of the spin-currents in the antiparallel state with the evidence of a tunneling anomalous Hall effect. Using the boundary conditions corresponding to heavy-hole (HH)-to-light-hole (LH) mixing of the relevant C2v symmetry at III-V interfaces of the junctions, we demonstrate that the efficiency of the transverse spin-current necessary to STT is surprisingly enhanced by the HH-to-LH mixing taking benefit of the lighter mass of the LH state.

KW - Anomalous tunnel hall effect

KW - ferromagnetic semiconductors

KW - multiband k · p

KW - spin injection

KW - spin-transfer torque (STT)

KW - tunneling magnetoresistance (TMR)

U2 - 10.1109/TMAG.2019.2894571

DO - 10.1109/TMAG.2019.2894571

M3 - Article

AN - SCOPUS:85067804258

SN - 0018-9464

VL - 55

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 7

M1 - 8728038

ER -

Spin-Orbit Currents, Spin-Transfer Torque and Anomalous Tunneling in III-V Heterostructures Probed by Advanced 30-and 40-Bands k · p Tunneling Methods

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Keywords

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