Abstract
On the basis of tunneling magnetoresistance (TMR) spin-transfer torque (STT) experiments in (Ga,Mn)As/GaAs/(Ga,Mn)As submicronic magnetic tunnel junctions, we have analyzed the anatomy of the spin-current profiles within the heterostructures, location of strong spin-orbit interactions. Beyond the TMR, our robust 30-and 40-band k · p numerical methods reveal the strong peculiarity of the spin-currents in the antiparallel state with the evidence of a tunneling anomalous Hall effect. Using the boundary conditions corresponding to heavy-hole (HH)-to-light-hole (LH) mixing of the relevant C2v symmetry at III-V interfaces of the junctions, we demonstrate that the efficiency of the transverse spin-current necessary to STT is surprisingly enhanced by the HH-to-LH mixing taking benefit of the lighter mass of the LH state.
| Original language | English |
|---|---|
| Article number | 8728038 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 55 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1 Jul 2019 |
Keywords
- Anomalous tunnel hall effect
- ferromagnetic semiconductors
- multiband k · p
- spin injection
- spin-transfer torque (STT)
- tunneling magnetoresistance (TMR)
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