Spin-polarized inelastic tunneling through insulating barriers

  • Y. Lu
  • , M. Tran
  • , H. Jaffrès
  • , P. Seneor
  • , C. Deranlot
  • , F. Petroff
  • , J. M. George
  • , B. Lépine
  • , S. Ababou
  • , G. Jézéquel

Research output: Contribution to journalArticlepeer-review

Abstract

Spin-conserving hopping transport through chains of localized states has been evidenced by taking benefit of the high degree of spin-polarization of CoFeB-MgO-CoFeB magnetic tunnel junctions. In particular, our data show that relatively thick MgO barriers doped with boron favor the activation of spin-conserving inelastic channels through a chain of three localized states and leading to reduced magnetoresistance effects. We propose an extension of the Glazman-Matveev theory to the case of ferromagnetic reservoirs to account for spin-polarized inelastic tunneling through nonmagnetic localized states embedded in an insulating barrier.

Original languageEnglish
Article number176801
JournalPhysical Review Letters
Volume102
Issue number17
DOIs
Publication statusPublished - 27 Apr 2009

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