TY - GEN
T1 - Spintronic THz emitters based on transition metals and semi-metals/Pt multilayers
AU - Massabeau, S.
AU - Hawecker, J.
AU - Rongione, E.
AU - Markou, A.
AU - Krishnia, S.
AU - Godel, F.
AU - Collin, S.
AU - Lebrun, R.
AU - Tignon, J.
AU - Mangeney, J.
AU - Boulier, T.
AU - George, J. M.
AU - Felser, C.
AU - Jaffres, H.
AU - Dhillon, S.
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023/1/1
Y1 - 2023/1/1
N2 - Heterostructures made of nanometer thick ferromagnetic/heavy metal junctions have become reliable materials in order to achieve broadband and gap-less THz sources, key elements for the development of THz technologies. Whereas the performances of these ultrathin spintronic THz emitters already surpass some usual THz sources, a better understanding of the fundamental emission/absorption mechanisms at play is crucial for reaching higher THz field. Starting from standard bilayer ferromagnetic/transition metal junctions, we present here how THz emission can be significantly enhanced by tailoring the stacking of such structures, adding a spin-sink layer and with the use of semi-metals as spin-injectors. Furthermore, our results allows to extract THz and spin properties of the materials, paving the way towards further enhancement.
AB - Heterostructures made of nanometer thick ferromagnetic/heavy metal junctions have become reliable materials in order to achieve broadband and gap-less THz sources, key elements for the development of THz technologies. Whereas the performances of these ultrathin spintronic THz emitters already surpass some usual THz sources, a better understanding of the fundamental emission/absorption mechanisms at play is crucial for reaching higher THz field. Starting from standard bilayer ferromagnetic/transition metal junctions, we present here how THz emission can be significantly enhanced by tailoring the stacking of such structures, adding a spin-sink layer and with the use of semi-metals as spin-injectors. Furthermore, our results allows to extract THz and spin properties of the materials, paving the way towards further enhancement.
U2 - 10.1109/IRMMW-THz57677.2023.10299209
DO - 10.1109/IRMMW-THz57677.2023.10299209
M3 - Conference contribution
AN - SCOPUS:85177650321
T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
BT - IRMMW-THz 2023 - 48th Conference on Infrared, Millimeter, and Terahertz Waves
PB - IEEE Computer Society
T2 - 48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023
Y2 - 17 September 2023 through 22 September 2023
ER -