Stability versus structure in glow discharge hydrogenated amorphous silicon obtained from a wide range of deposition conditions

S. Vignoli; R. Meaudre; M. Meaudre; P. Roca I Cabarrocas; C. Godet; P. Morin

doi:10.1016/0022-3093(95)00739-3

Stability versus structure in glow discharge hydrogenated amorphous silicon obtained from a wide range of deposition conditions

S. Vignoli, R. Meaudre, M. Meaudre, P. Roca I Cabarrocas, C. Godet, P. Morin

Research output: Contribution to journal › Article › peer-review

Abstract

A model based on an equilibrium between light-induced creation and light-induced recovery of defects has been applied to defect creation kinetics on a wide variety of hydrogenated amorphous silicon films. A tentative approach to determine the structural properties responsible for the instability of the films show that there is a good correlation between stability and dilute-phase Si-H bond concentrations for samples deposited from helium or hydrogen dilution of silane and a large scatter in films deposited from pure silane.

Original language	English
Pages (from-to)	474-477
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	198-200
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(95)00739-3
Publication status	Published - 1 Jan 1996

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title = "Stability versus structure in glow discharge hydrogenated amorphous silicon obtained from a wide range of deposition conditions",

abstract = "A model based on an equilibrium between light-induced creation and light-induced recovery of defects has been applied to defect creation kinetics on a wide variety of hydrogenated amorphous silicon films. A tentative approach to determine the structural properties responsible for the instability of the films show that there is a good correlation between stability and dilute-phase Si-H bond concentrations for samples deposited from helium or hydrogen dilution of silane and a large scatter in films deposited from pure silane.",

author = "S. Vignoli and R. Meaudre and M. Meaudre and \{Roca I Cabarrocas\}, P. and C. Godet and P. Morin",

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AU - Vignoli, S.

AU - Meaudre, R.

AU - Meaudre, M.

AU - Roca I Cabarrocas, P.

AU - Godet, C.

AU - Morin, P.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - A model based on an equilibrium between light-induced creation and light-induced recovery of defects has been applied to defect creation kinetics on a wide variety of hydrogenated amorphous silicon films. A tentative approach to determine the structural properties responsible for the instability of the films show that there is a good correlation between stability and dilute-phase Si-H bond concentrations for samples deposited from helium or hydrogen dilution of silane and a large scatter in films deposited from pure silane.

AB - A model based on an equilibrium between light-induced creation and light-induced recovery of defects has been applied to defect creation kinetics on a wide variety of hydrogenated amorphous silicon films. A tentative approach to determine the structural properties responsible for the instability of the films show that there is a good correlation between stability and dilute-phase Si-H bond concentrations for samples deposited from helium or hydrogen dilution of silane and a large scatter in films deposited from pure silane.

U2 - 10.1016/0022-3093(95)00739-3

DO - 10.1016/0022-3093(95)00739-3

M3 - Article

AN - SCOPUS:11744257059

SN - 0022-3093

VL - 198-200

SP - 474

EP - 477

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

Stability versus structure in glow discharge hydrogenated amorphous silicon obtained from a wide range of deposition conditions

Abstract

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