@inproceedings{0568c49278244aca822899e90e796664,
title = "Strain engineering in germanium microdisks",
abstract = "The keystone to realize a monolithic integrated source on silicon with germanium is to optimize tensile strain and n-doping. In order to realize an integrated compact source, we demonstrate highly strained n-doped germanium microdisks obtained by two approaches using initially compressed silicon nitride (SiN) deposition. In the first approach, the microdisks are fabricated from relaxed Ge. In a second approach, we use tensile-strained Ge grown on a mismatched buffer layer, thus increasing the global strain in the Ge volume and lowering its gradient. A photoluminescence red-shift up to 450 nm is observed, corresponding to more than 1\% biaxial strain.",
keywords = "Germanium, Microdisks, Optical resonators, Photoluminescence, Semi-conductor strain engineering, Silicon photonics, Whispering gallery modes",
author = "A. Ghrib and \{El Kurdi\}, M. and M. Prost and \{De Kersauson\}, M. and L. Largeau and O. Mauguin and G. Beaudoin and S. Sauvage and X. Checoury and G. Ndong and M. Chaigneau and R. Ossikovski and S. David and I. Sagnes and P. Boucaud",
year = "2014",
month = jan,
day = "1",
doi = "10.1117/12.2037307",
language = "English",
isbn = "9780819499035",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "Silicon Photonics IX",
note = "Silicon Photonics IX ; Conference date: 03-02-2014 Through 05-02-2014",
}