Stress cancellation in silicon oxynitride/InP structures obtained by rapid thermal chemical vapor deposition

F. Lebland; C. Licoppe; Y. I. Nissim

doi:10.1063/1.351531

Stress cancellation in silicon oxynitride/InP structures obtained by rapid thermal chemical vapor deposition

F. Lebland, C. Licoppe, Y. I. Nissim

Orange Labs

Research output: Contribution to journal › Article › peer-review

Abstract

Rapid thermal chemical vapor deposition was utilized to deposit silicon-based dielectrics on III-V materials at high temperature. Silicon oxynitride films can be deposited on InP at 750°C with compositions varying between silicon dioxide and silicon nitride. Secondary ion mass spectroscopy and nuclear reaction analysis measurements show that the oxygen concentration in the layers varies continuously with the oxidant gas flow rate. The overall stoichiometry of the films can be controlled with this parameter. The composition of the layers has a direct incidence on the mechanical tension of the insulator/semiconductor structures. A highly sensitive optical setup has been developed to measure the tension on these samples in order to determine the stoichiometry of the silicon oxynitride (SiO_xN_y) film that leaves the structure unstressed. The stress-free film composition is shown to depend also strongly on the thickness of the layer. A study of the overall stress introduced in a structure during its fabrication is presented.

Original language	English
Pages (from-to)	2802-2805
Number of pages	4
Journal	Journal of Applied Physics
Volume	72
Issue number	7
DOIs	https://doi.org/10.1063/1.351531
Publication status	Published - 1 Dec 1992
Externally published	Yes

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title = "Stress cancellation in silicon oxynitride/InP structures obtained by rapid thermal chemical vapor deposition",

abstract = "Rapid thermal chemical vapor deposition was utilized to deposit silicon-based dielectrics on III-V materials at high temperature. Silicon oxynitride films can be deposited on InP at 750°C with compositions varying between silicon dioxide and silicon nitride. Secondary ion mass spectroscopy and nuclear reaction analysis measurements show that the oxygen concentration in the layers varies continuously with the oxidant gas flow rate. The overall stoichiometry of the films can be controlled with this parameter. The composition of the layers has a direct incidence on the mechanical tension of the insulator/semiconductor structures. A highly sensitive optical setup has been developed to measure the tension on these samples in order to determine the stoichiometry of the silicon oxynitride (SiOxNy) film that leaves the structure unstressed. The stress-free film composition is shown to depend also strongly on the thickness of the layer. A study of the overall stress introduced in a structure during its fabrication is presented.",

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year = "1992",

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doi = "10.1063/1.351531",

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T1 - Stress cancellation in silicon oxynitride/InP structures obtained by rapid thermal chemical vapor deposition

AU - Lebland, F.

AU - Licoppe, C.

AU - Nissim, Y. I.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - Rapid thermal chemical vapor deposition was utilized to deposit silicon-based dielectrics on III-V materials at high temperature. Silicon oxynitride films can be deposited on InP at 750°C with compositions varying between silicon dioxide and silicon nitride. Secondary ion mass spectroscopy and nuclear reaction analysis measurements show that the oxygen concentration in the layers varies continuously with the oxidant gas flow rate. The overall stoichiometry of the films can be controlled with this parameter. The composition of the layers has a direct incidence on the mechanical tension of the insulator/semiconductor structures. A highly sensitive optical setup has been developed to measure the tension on these samples in order to determine the stoichiometry of the silicon oxynitride (SiOxNy) film that leaves the structure unstressed. The stress-free film composition is shown to depend also strongly on the thickness of the layer. A study of the overall stress introduced in a structure during its fabrication is presented.

AB - Rapid thermal chemical vapor deposition was utilized to deposit silicon-based dielectrics on III-V materials at high temperature. Silicon oxynitride films can be deposited on InP at 750°C with compositions varying between silicon dioxide and silicon nitride. Secondary ion mass spectroscopy and nuclear reaction analysis measurements show that the oxygen concentration in the layers varies continuously with the oxidant gas flow rate. The overall stoichiometry of the films can be controlled with this parameter. The composition of the layers has a direct incidence on the mechanical tension of the insulator/semiconductor structures. A highly sensitive optical setup has been developed to measure the tension on these samples in order to determine the stoichiometry of the silicon oxynitride (SiOxNy) film that leaves the structure unstressed. The stress-free film composition is shown to depend also strongly on the thickness of the layer. A study of the overall stress introduced in a structure during its fabrication is presented.

U2 - 10.1063/1.351531

DO - 10.1063/1.351531

M3 - Article

AN - SCOPUS:0005908285

SN - 0021-8979

VL - 72

SP - 2802

EP - 2805

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Stress cancellation in silicon oxynitride/InP structures obtained by rapid thermal chemical vapor deposition

Abstract

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