Strong visible and near-infrared electroluminescence and formation process in Si-rich polymorphous silicon carbon

Junzhuan Wang; Linwei Yu; Sergey Abolmasov; Ka Hyun Kim; Pere Roca I Cabarrocas

doi:10.1063/1.3691904

Strong visible and near-infrared electroluminescence and formation process in Si-rich polymorphous silicon carbon

Junzhuan Wang, Linwei Yu, Sergey Abolmasov, Ka Hyun Kim, Pere Roca I Cabarrocas

Research output: Contribution to journal › Article › peer-review

Abstract

We report here a strong and stable electroluminescence (EL) from Si-rich hydrogenated polymorphous silicon carbon thin films (pm-Si _1-xC _x : H) fabricated in a plasma-enhanced chemical vapor deposition system. We investigate an unusual forming process in the pm-Si _1-xC _x : H thin films, during initial EL stressing, and propose a current-stress-induced phase separation process for the formation of new Si nanoclusters, which give rise to strongly enhanced emissions in both visible and near infrared ranges at 1.8-2.1 eV and 0.8-1.2 eV, respectively. The sub-crystalline-Si-bandgap emission is particularly attractive to realize a Si-based multi-band light source for optical interconnection and telecommunication.

Original language	English
Article number	053108
Journal	Journal of Applied Physics
Volume	111
Issue number	5
DOIs	https://doi.org/10.1063/1.3691904
Publication status	Published - 1 Mar 2012

Access to Document

10.1063/1.3691904

Cite this

@article{da6b4136d80e49c987b9911910710245,

title = "Strong visible and near-infrared electroluminescence and formation process in Si-rich polymorphous silicon carbon",

abstract = "We report here a strong and stable electroluminescence (EL) from Si-rich hydrogenated polymorphous silicon carbon thin films (pm-Si 1-xC x : H) fabricated in a plasma-enhanced chemical vapor deposition system. We investigate an unusual forming process in the pm-Si 1-xC x : H thin films, during initial EL stressing, and propose a current-stress-induced phase separation process for the formation of new Si nanoclusters, which give rise to strongly enhanced emissions in both visible and near infrared ranges at 1.8-2.1 eV and 0.8-1.2 eV, respectively. The sub-crystalline-Si-bandgap emission is particularly attractive to realize a Si-based multi-band light source for optical interconnection and telecommunication.",

author = "Junzhuan Wang and Linwei Yu and Sergey Abolmasov and Kim, \{Ka Hyun\} and \{I Cabarrocas\}, \{Pere Roca\}",

year = "2012",

month = mar,

day = "1",

doi = "10.1063/1.3691904",

language = "English",

volume = "111",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "5",

}

TY - JOUR

T1 - Strong visible and near-infrared electroluminescence and formation process in Si-rich polymorphous silicon carbon

AU - Wang, Junzhuan

AU - Yu, Linwei

AU - Abolmasov, Sergey

AU - Kim, Ka Hyun

AU - I Cabarrocas, Pere Roca

PY - 2012/3/1

Y1 - 2012/3/1

N2 - We report here a strong and stable electroluminescence (EL) from Si-rich hydrogenated polymorphous silicon carbon thin films (pm-Si 1-xC x : H) fabricated in a plasma-enhanced chemical vapor deposition system. We investigate an unusual forming process in the pm-Si 1-xC x : H thin films, during initial EL stressing, and propose a current-stress-induced phase separation process for the formation of new Si nanoclusters, which give rise to strongly enhanced emissions in both visible and near infrared ranges at 1.8-2.1 eV and 0.8-1.2 eV, respectively. The sub-crystalline-Si-bandgap emission is particularly attractive to realize a Si-based multi-band light source for optical interconnection and telecommunication.

AB - We report here a strong and stable electroluminescence (EL) from Si-rich hydrogenated polymorphous silicon carbon thin films (pm-Si 1-xC x : H) fabricated in a plasma-enhanced chemical vapor deposition system. We investigate an unusual forming process in the pm-Si 1-xC x : H thin films, during initial EL stressing, and propose a current-stress-induced phase separation process for the formation of new Si nanoclusters, which give rise to strongly enhanced emissions in both visible and near infrared ranges at 1.8-2.1 eV and 0.8-1.2 eV, respectively. The sub-crystalline-Si-bandgap emission is particularly attractive to realize a Si-based multi-band light source for optical interconnection and telecommunication.

U2 - 10.1063/1.3691904

DO - 10.1063/1.3691904

M3 - Article

AN - SCOPUS:84858964282

SN - 0021-8979

VL - 111

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 053108

ER -

Strong visible and near-infrared electroluminescence and formation process in Si-rich polymorphous silicon carbon

Abstract

Access to Document

Fingerprint

Cite this