Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors

Chang Hyun Kim; Htay Hlaing; Marcia M. Payne; Kevin G. Yager; Yvan Bonnassieux; Gilles Horowitz; John E. Anthony; Ioannis Kymissis

doi:10.1002/cphc.201402360

Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors

Chang Hyun Kim, Htay Hlaing, Marcia M. Payne, Kevin G. Yager, Yvan Bonnassieux, Gilles Horowitz, John E. Anthony, Ioannis Kymissis

Research output: Contribution to journal › Article › peer-review

Abstract

The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro-to-nanoscale investigation on the crystal growth of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene (diF-TEG-ADT) and its implication for the electrical behavior of organic field-effect transistors (OFETs). diF-TEG-ADT exhibits remarkable self-assembly through spin-cast preparation, with highly aligned edge-on stacking creating a fast hole-conducting channel for OFETs.

Original language	English
Pages (from-to)	2913-2916
Number of pages	4
Journal	ChemPhysChem
Volume	15
Issue number	14
DOIs	https://doi.org/10.1002/cphc.201402360
Publication status	Published - 6 Oct 2014

Keywords

charge transport
crystallinity
diF-TEG-ADT
field-effect transistors
semiconductors

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title = "Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors",

abstract = "The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro-to-nanoscale investigation on the crystal growth of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene (diF-TEG-ADT) and its implication for the electrical behavior of organic field-effect transistors (OFETs). diF-TEG-ADT exhibits remarkable self-assembly through spin-cast preparation, with highly aligned edge-on stacking creating a fast hole-conducting channel for OFETs.",

keywords = "charge transport, crystallinity, diF-TEG-ADT, field-effect transistors, semiconductors",

author = "Kim, \{Chang Hyun\} and Htay Hlaing and Payne, \{Marcia M.\} and Yager, \{Kevin G.\} and Yvan Bonnassieux and Gilles Horowitz and Anthony, \{John E.\} and Ioannis Kymissis",

note = "Publisher Copyright: {\textcopyright} 2014 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2014",

month = oct,

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doi = "10.1002/cphc.201402360",

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AU - Kim, Chang Hyun

AU - Hlaing, Htay

AU - Payne, Marcia M.

AU - Yager, Kevin G.

AU - Bonnassieux, Yvan

AU - Horowitz, Gilles

AU - Anthony, John E.

AU - Kymissis, Ioannis

PY - 2014/10/6

Y1 - 2014/10/6

N2 - The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro-to-nanoscale investigation on the crystal growth of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene (diF-TEG-ADT) and its implication for the electrical behavior of organic field-effect transistors (OFETs). diF-TEG-ADT exhibits remarkable self-assembly through spin-cast preparation, with highly aligned edge-on stacking creating a fast hole-conducting channel for OFETs.

AB - The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro-to-nanoscale investigation on the crystal growth of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene (diF-TEG-ADT) and its implication for the electrical behavior of organic field-effect transistors (OFETs). diF-TEG-ADT exhibits remarkable self-assembly through spin-cast preparation, with highly aligned edge-on stacking creating a fast hole-conducting channel for OFETs.

KW - charge transport

KW - crystallinity

KW - diF-TEG-ADT

KW - field-effect transistors

KW - semiconductors

U2 - 10.1002/cphc.201402360

DO - 10.1002/cphc.201402360

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SN - 1439-4235

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IS - 14

ER -

Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors

Abstract

Keywords

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