TY - GEN
T1 - Structural, optical and photoelectric properties of hydrogenated polymorphous silicon
AU - Khenkin, M.
AU - Kazanskii, A.
AU - Emelyanov, A.
AU - Forsh, P.
AU - Kim, K. H.
AU - Cariou, R.
AU - Roca I Cabarrocas, P.
PY - 2013/1/1
Y1 - 2013/1/1
N2 - We have studied structural, electrical, photoelectric and optical properties of two series of polymorphous silicon thin films deposited by PECVD with variation of silane and hydrogen gas mixture pressure and substrate temperature. The change of gas pressure did not affect substantially films' Raman spectra, but resulted in changes of photoconductivity values and spectral dependencies of absorption coefficient measured by constant photocurrent method. Observed changes in films' optical and photoelectric parameters are associated with the presence of Si nanocrystals in the film structure as revealed by TEM. Substrate temperature did not affect substantially polymorphous silicon films structure and properties in annealed state, but increasing of the substrate temperature led to a formation of the material with enhanced stability against photoinduced degradation. Electron paramagnetic resonance spectra of polymorphous silicon samples showed signal with g=1,998. Possible nature of the signal is discussed.
AB - We have studied structural, electrical, photoelectric and optical properties of two series of polymorphous silicon thin films deposited by PECVD with variation of silane and hydrogen gas mixture pressure and substrate temperature. The change of gas pressure did not affect substantially films' Raman spectra, but resulted in changes of photoconductivity values and spectral dependencies of absorption coefficient measured by constant photocurrent method. Observed changes in films' optical and photoelectric parameters are associated with the presence of Si nanocrystals in the film structure as revealed by TEM. Substrate temperature did not affect substantially polymorphous silicon films structure and properties in annealed state, but increasing of the substrate temperature led to a formation of the material with enhanced stability against photoinduced degradation. Electron paramagnetic resonance spectra of polymorphous silicon samples showed signal with g=1,998. Possible nature of the signal is discussed.
KW - Absorption
KW - Amorphous materials
KW - Photoconductivity
KW - Polymorphous silicon
KW - Staebler-Wronski effect
UR - https://www.scopus.com/pages/publications/84896448178
U2 - 10.1109/PVSC.2013.6744214
DO - 10.1109/PVSC.2013.6744214
M3 - Conference contribution
AN - SCOPUS:84896448178
SN - 9781479932993
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 563
EP - 567
BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Y2 - 16 June 2013 through 21 June 2013
ER -